SUNNYVALE, Calif.–(BUSINESS WIRE)–Sept. 16, 2002–
MoSys, Inc. (Nasdaq: MOSY – News) the industry’s leading provider of high
density SoC embedded memory solutions, today announced the licensing
of MoSys’ 1T-SRAM® embedded memory technology to National
Semiconductor.

The 1T-SRAM embedded memory technology is an innovative solution
that National will use to enable the incorporation of high
performance, high density embedded memory blocks into their future
cellular baseband SoCs.

“The 1T-SRAM embedded memory solution was evaluated according to
our requirements. MoSys’ technology offers unique performance, density
and ultra-low power capabilities not available from other standard
SRAM technologies. By using MoSys’ 1T-SRAM embedded memory, our
customers will benefit from the high density, low power advantages
this technology delivers,” said Mal Humphrey, director of the cellular
solutions product line within National Semiconductor’s wireless
division.

The license agreement will initially be used for products built in
the 0.13-micron process generation using MoSys’ recently announced
1T-SRAM-R(TM) technology that incorporates Transparent Error
Correction(TM) (TEC(TM) ) to eliminate the need for the laser repair
manufacturing step while providing improved soft error rate, yield and
reliability compared to other embedded memory technologies.

“We are excited that an industry frontrunner like National
Semiconductor has joined the growing list of companies choosing
MoSys’1T-SRAM technology,” said Mark-Eric Jones, vice president and
general manager of intellectual property at MoSys. “In leading-edge
process geometries, 1T-SRAM can lower standby power and help avoid the
increasing bitcell leakage of six transistor memory designs for the
very demanding requirements of next generation cellular designs and
other mobile products. As the proportion of SoC die area occupied by
memory continues to grow these benefits translate to dramatic
advantages for the whole SoC — and, consequently, for National’s
customers.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq: MOSY – News), develops, licenses and
markets innovative memory technology for semiconductors. MoSys’
patented 1T-SRAM technology offers a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM technology also
offers the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, this technology can reduce operating power consumption by a
factor of four compared with traditional SRAM technology, contributing
to making it an ideal technology for embedding large memories in
System on Chip (SoC) designs. 1T-SRAM technology is in volume
production both in SoC products at MoSys’ licensees as well as in
MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at www.mosys.com.

Note for Editors:
1T-SRAM®is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or servicenames referenced
in this release may be trademarks or registered trademarks of their
respective holders.

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