SUNNYVALE, CALIFORNIA (March 27, 2002) – MoSys (NASDAQ:MOSY) today announced that its licensee’s production of 1T-SRAM embedded memory technology has passed 20 million units with over 20 products currently in production. The shipped devices represent a total of over one billion megabits (1,000,000,000,000,000 bits) of 1T-SRAM embedded memory now in use, targeted for products such as video games, communications switches, flat panel display controllers, digital still cameras and camcorders.
“We have achieved many significant milestones since our founding in 1991, but this production milestone for licensees using 1T-SRAM memory in their products is particularly significant,” stated Mark-Eric Jones, the company’s vice president and general manager of intellectual property. “Memory, on average, already occupies the largest portion of the SoC die area, and its use continues to grow rapidly. As a result, it has the single greatest influence on SoC cost, power, performance and quality, and this production milestone documents the importance of 1T-SRAM in delivering value to our licensees in these parameters.”
To facilitate designers estimating the cost savings that they can achieve on their own SoC designs, MoSys has added a die cost and savings estimator to its newly-updated website. Users can enter the data about their planned SoC designs and estimate die size, good die cost and dramatic savings that they can realize by using the extra density of 1T-SRAM memory technology. The updated website also includes downloadable datasheets for the range of 1T-SRAM standard macros that are available for rapid delivery as well as information regarding generation of custom 1T-SRAM memory macros and MoSys Design Service Alliance (DSA) partners. See http://www.mosys.com.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System-on-Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at www.mosys.com.
Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.