New 1T-SRAM(R) Dual-Port Display Memory Macro with Foundry Support Opens
Significant New Market for MoSys; Initial Adoption in Handset Displays Already

SUNNYVALE, Calif., March 22 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), the leading provider of high-density system-on-chip (SoC)
embedded memory intellectual property (IP), announced today the availability
of an application-specific implementation of its industry-leading 1T-SRAM(R)
memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display
macros have been designed specifically for mobile handset displays. Initial
customer adoption is already underway, marking MoSys’ entry into a new
high-volume consumer market.

Manufacturers of mobile handsets are under increasing pressure to
incorporate larger buffer memory into the display to accommodate increases in
display size and pixel densities. Such increases are driven by added
functionality, like video playback, gaming, and high-resolution cameras on
mobile phones. The MoSys 1T-SRAM Dual-Port Display macro is used as the
display buffer memory mounted on the display (chip-on-glass) or on the
connecting cable (chip-on-film or tape carrier package). By keeping the
display buffer memory on the display itself, mobile vendors can reduce
electromagnetic interference (EMI) challenges, while cutting overall display
power consumption. In these configurations, the buffer memory must conform to
unusual area and form factor requirements of the display, which is easily
accomplished using the MoSys 1T-SRAM technology.

Compatible with high-volume processes at major foundries and integrated
device manufacturers, the MoSys 1T-SRAM Dual-Port Display macro uses standard
foundry process technologies and offers a reduction in overall silicon area of
up to 70 percent when compared to conventional embedded memory solutions.

Said Chet Silvestri, president and CEO of MoSys, “We continue to find ways
to enable new and exciting consumer applications based on the core strength of
the MoSys 1T-SRAM technology. We are seeing strong customer interest in our
new MoSys Dual-Port Display macro, which is the first application-optimized
memory built on our technology platform. It is already being designed into
mobile handset devices.”

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys’ patented
1T-SRAM & 1T-FLASH technologies offer a combination of high density, low power
consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at

1T-SRAM is a registered trademark of MoSys, Inc.

CONTACT: Raj Singh, Vice President of WW Sales, Marketing & Business
Development of MoSys, Inc., +1-408-731-1825,