Analog Devices, NEC and TSMC are first licensees

Patented 1T-SRAM technology offers SRAM performance at DRAM density

SUNNYVALE, CA, March 1, 1999— Announcing
its entry into the growing semiconductor intellectual property (IP)
market, MoSys, Inc. said today it will make its high-performance,
high-density 1T-SRAM embedded memory architecture available for
licensing. In separate announcements made today, MoSys revealed
that Analog Devices (NYSE: ADI), NEC and TSMC have licensed its
1T-SRAM technology. 1T-SRAM represents a breakthrough in combined
density and speed.

For the first time, embedded SRAM densities up to 128 Mbits will
be available to memory intensive and cost sensitive system-on-chip
(SoC) designs. This unique memory architecture allows SoC designers
to take advantage of the ease-of-use and speed associated with SRAM
technology, while achieving DRAM density and significantly reduced
power consumption. The 1T-SRAM technology has already been proven
in silicon through the high volume shipment of MoSys’ discrete SRAM
memory devices.

“MoSys perfected this technology in its industry-leading standard
memory devices and has now decided to offer it in much higher densities
to the embedded memory market through an IP business model,” said
Dr. Fu-Chieh Hsu, MoSys’ CEO. “We expect 1T-SRAM to enable a range
of SoC applications that were previously not cost-effective.”

The industry’s move to deep sub-micron process technologies and
the proliferation of high-volume applications are driving the use
of embedded memories. Key applications include notebook and desktop
graphics, consumer electronics, digital cameras, PDAs, wireless
communications, mass storage and networking. Embedding the memory
on-chip provides several benefits, including higher performance,
lower power consumption, printed circuit board area savings, reduced
parts count, and higher quality and reliability. Embedded memory
is a critical component in today’s deep sub-micron SoC designs,
as it often consumes 40 percent or more of the die area.

About 1T-SRAM

Available in densities up to 128Mbits, 1T-SRAM technology uses
a single-transistor cell to achieve its exceptional density while
maintaining the refresh-free interface and low latency random memory
access cycle time associated with normal six-transistor SRAM cells.
Embedded 1T-SRAM helps SoC designers get beyond the density limits
of 6T-SRAMs; it also helps reduce much of the circuit complexity
and extra cost associated with using embedded DRAM. 1T-SRAM memories
can be fabricated using either pure logic or embedded memory processes
without violating standard design rules, and using as little as
one ninth of the area of normal six-transistor SRAM cores. In addition,
this technology offers dramatic power consumption savings using
a quarter of the power of conventional SRAM designs.

“With densities of more than three times those of conventional
embedded SRAM in the same standard logic process, MoSys’ 1T-SRAM
allows engineers to embed megabytes of SRAM in their low-cost designs,”
said Mark-Eric Jones, vice president and general manager, intellectual
property. “In addition to the licensees announced today, we will
be making this technology available through other leading semiconductor

About MoSys

MoSys, Inc. is a semiconductor memory technology company that specializes
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the Company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94086. More information on MoSys is available at

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Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.