SUNNYVALE, Calif.–(BUSINESS WIRE)–Aug. 2, 2006–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
System-on-Chip (SoC) embedded memory solutions announced today that it
has completed the basic research and development work for porting
MoSys’ 1T-SRAM(R) embedded memory technology to the advanced 65nm
semiconductor technology node and has initiated macro design work in
order to move these designs into high volume consumer SoC’s.
Among these initiatives, the company has signed the first 65nm
technology license and royalty agreement with a major integrated
device manufacturer (IDM). This agreement, which was expected to sign
in the second quarter, has now been completed.
Additionally, design work has begun to create 65nm implementations
of the pre-configured CLASSIC Macro product line with leading
“The density and power advantages of our 1T-SRAM technology
continue to improve as we scale to smaller geometries like 65nm,”
mentioned Chet Silvestri, Chief Executive Officer of MoSys, “and we
are pleased to be working with industry-leading semiconductor
manufacturers in order to make our 65nm implementations available to
About MoSys Inc.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System-on-Chip (SoC) designs. MoSys’ licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.
CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
SOURCE: MoSys, Inc.