Partners support proliferation of 1T-SRAM technology
SUNNYVALE, CALIFORNIA (July 24, 2001) – MoSys, Inc. (NASDAQ: MOSY) announced fourteen charter members of the MoSys 1T-SRAM Design Services Alliance (DSA).
DSA members provide customers with additional expertise to accelerate design cycles and ramp to volume production. This initiative supports the proliferation of 1T-SRAM memory to an increasing number of SoC designs.
“Building upon our customers’ production success with 1T-SRAM technology, the wealth of experience of our DSA partners will expand global access to this technology,” commented Bill Lev, manager of MoSys’ DSA program.
“We are pleased by the strong response received from industry leaders and excited by the benefits our customers will realize from this infrastructure.”
The DSA is comprised of members in three important areas: Turnkey Design, Design For Test, Assembly and Test.
Charter Turnkey Design Services members spanning the globe are Arcadia Design Systems, EE Solutions, eSilicon, Goya Technology, MacroTech, Nordic VLSI, QThink, SOTA Design Technology, Spinnaker Systems, Toppan and TSMC Design Services.
These members provide MoSys’ 1T-SRAM customers additional expertise for SoC product development including netlist-to-tapeout, product engineering and production management.
The Design For Test charter members – LogicVision and Mentor Graphics – are providing integrated design-for-test (DFT) and built-in-self-test (BIST) solutions for 1T-SRAM users. In addition, charter Assembly and Test member ASE Test provides
wafer sort, laser repair and assembly of ICs incorporating 1T-SRAM macros.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology
achieving much higher density than traditional four or six transistor SRAMs whilst the innovative 1T-SRAM architecture allows the use of standard logic manufacturing processes without requiring any process changes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared
with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in discrete memories available from MoSys as well as
in SoC products at MoSys’ licensees.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory
technologies. MoSys provides 1T-SRAM technology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys.
Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085.
More information is available on MoSys’ website at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.