Proven Technology Enables Fast Macro Integration of GigE PHY Technology into a
Range of Consumer and Networking ICs
SUNNYVALE, Calif., Nov. 1 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), a leading provider of high-density embedded memory and mixed-
signal intellectual property (IP) solutions, today announced availability of a
Gigabit Ethernet Physical Layer (PHY) on copper semiconductor IP. The product
is the first of the company’s GigaCell(TM) family of IP targeted at the Wide,
Local, and Storage Area Networking markets. Proven in silicon form, the IP is
available as a GigE PHY macro suitable for integration in numerous port
“The announcement of our high-performance Gigabit PHY is our first
strategic move into the mixed-signal IP market,” stated Max Bathaee, Director
of Mixed-Signal Marketing at MoSys. “In the past, availability of high
performance network products was limited to a few vendors due to the
complexity of mixed-signal designs. This IP will enable our customers to
develop advanced, highly-integrated networking SoCs for a broad range of
applications including wireless networks, Voice-over-Internet Protocol (VoIP),
Network Switches, Backbone, Power-over-Ethernet (PoE), and LAN on Motherboard
The MoSys Gigabit PHY IP supports IEEE-defined 10/100/1000 BASE-T Ethernet
over Category 5 (CAT 5) twisted pair cables and 10/100 BASE-T Ethernet over
CAT 3, 4, and 5 cables. The Gigabit PHY is currently designed in a low power
130nm CMOS and can be readily ported to 65nm and 45nm processes. MoSys offers
a multi-port Gigabit PHY with up to 8 integrated ports ready to be integrated
with a System-on-Chip (SoC).
The Gigabit Ethernet PHY IP is available now to pure play foundries, IDMs
and fabless semiconductor companies.
ABOUT MOSYS, INC.
MoSys Inc. provides advanced memory and analog/mixed-signal IP for systems
on chips (SoC), enabling electronic products to achieve levels of integration
that would be impossible or impractical using conventional technology. The
company’s groundbreaking memory solutions include its patented 1T-SRAM(R) and
1T-FLASH(TM) technologies-high-density alternatives to traditional volatile
and non-volatile embedded memory. MoSys analog/mixed-signal products feature a
number of industry firsts, including the first DVD front end IP to support
both Blu-ray (BD) and HD DVD formats. Using MoSys IP, system vendors can
achieve best-in-class price/performance in markets such as home entertainment
and graphics applications; mobile consumer devices; and networking and storage
equipment. To date, MoSys technology has been shipped in over 135 million
MoSys was founded in 1991, and had its initial public offering in 2001
(Nasdaq: MOSY). The company is headquartered in Sunnyvale, California at 755
N. Mathilda Avenue, Sunnyvale, California 94085. More information is available
on MoSys’ website at http://www.mosys.com.
1T-SRAM(R) , 1T-FLASH(TM), and GigaCell(TM) are registered trademarks of
+1 (408) 731-1832
Beverly Twing, Acct.
+1 (972) 239-5119 x126
SOURCE MoSys, Inc.
of MoSys, Inc.,
Acct. Manager of Shelton IR,
+1-972-239-5119, ext. 126,
for MoSys, Inc./
Web site: http://www.mosys.com