SUNNYVALE, Calif., March 14 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), the industry’s leading provider of high-density system-on-chip
(SoC) embedded memory intellectual property (IP) solutions, announced today
that it has extended its partnership with China’s leading foundry,
Semiconductor Manufacturing International Corporation (SMIC) (NYSE: SMI), to
include MoSys’ new high-density embedded flash memory IP.
Under the terms of the agreement, the companies are collaborating on the
establishment of MoSys’ 1T-FLASH on SMIC’s manufacturing processes. MoSys’
1T-FLASH is an extremely high density NOR flash replacement and is being
implemented on SMIC’s pure logic CMOS processes. No additional process masks
or materials are required.
MoSys’ 1T-FLASH will offer developers of mobile devices, such as cellular
phones, and developers of embedded microcontrollers significant cost
advantages over current-generation solutions.
“Together with SMIC, we can offer a very compelling solution for SoC
designers who want to integrate large amounts of high-performance flash
memory,” said Chet Silvestri, president and CEO of MoSys.
About MoSys Inc.
Founded in 1991, MoSys (Nasdaq: MOSY) develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys’ patented
1T-SRAM and flash technologies offer a combination of high density, low power
consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at
SOURCE MoSys, Inc.
CONTACT: Raj Singh, Vice President of WW Sales, Marketing & Business
Development of MoSys, +1-408-731-1825, or firstname.lastname@example.org
Web site: http://www.mosys.com