SUNNYVALE, Calif., Dec 18, 2006 (BUSINESS WIRE) — MoSys, Inc. (NASDAQ: MOSY), the industry’s leading provider of
high-density system-on-chip (SoC) embedded memory intellectual
property (IP), today announced that Chet Silvestri, Chief Executive
Officer, and Jim Pekarsky, Chief Financial Officer, will be presenting
at the Ninth Annual Needham Growth Conference at the New York Palace
Hotel on Wednesday, January 10, 2007 at 7:30 AM EST.

A live audio Webcast of the presentation will be available on the
MoSys website at A replay will be available
shortly after the end of the presentation.


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at

SOURCE: MoSys, Inc.

Jim Pekarsky, CFO, 408-731-1846
Investor Relations:
Shelton Group
Beverly Twing, 972-239-5119 x 126