SUNNYVALE, Calif., Sep 06, 2006 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY), the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions, today announced that Chet Silvestri, Chief Executive
Officer and Jim Pekarsky, Chief Financial Officer, will be presenting
at A. G. Edwards Emerging Growth Conference at the New York Palace
Hotel on Wednesday, September 20, 2006 at 1:15 p.m. EST.

A live audio Webcast of the presentation will be available on the
MoSys website at http://www.mosys.com. A replay will be available
shortly after the end of the presentation.

ABOUT MOSYS, INC.

Founded in 1991, MoSys, Inc. (Nasdaq:MOSY), develops, licenses
and markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in SoC designs. MoSys’
licensees have shipped more than 100 million chips incorporating
1T-SRAM embedded memory technologies, demonstrating excellent
manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

SOURCE: MoSys, Inc.

MoSys, Inc.
Jim Pekarsky, 408-731-1846
chet@mosys.com
or
Shelton Group
Investor Relations
Beverly Twing, 972-239-5119 x-126
btwing@sheltongroup.com