SUNNYVALE, Calif.–(BUSINESS WIRE)–Nov. 2, 2006–MoSys, Inc.
(NASDAQ:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory intellectual property (IP), today
announced that Chet Silvestri, Chief Executive Officer, will be
presenting at the 2006 UBS Global Communications and Technology
Conference at the Grand Hyatt in New York City on Wednesday, November
15, 2006 at 10:00 a.m. ET.
A live audio Webcast of the presentation will be available on the
MoSys website at http://www.mosys.com. A replay will be available
shortly after the end of the presentation.
ABOUT MOSYS, INC.
Founded in 1991, MoSys, Inc. (NASDAQ:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 100 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at http://www.mosys.com.
CONTACT: MoSys, Sunnyvale
Jim Pekarsky, CFO, +1 408-731-1846
Beverly Twing, +1 972-239-5119 x 126
SOURCE: MoSys, Inc.