SUNNYVALE, Calif.–(BUSINESS WIRE)–Aug. 28, 2007–MoSys, Inc.
(MoSys) (NASDAQ: MOSY), the industry’s leading provider of high
density SoC embedded memory solutions, announced today that its board
of directors authorized the Company to purchase up to $19.5 million of
its common stock over the next twelve months. The share repurchases
may be made from time to time in the open market subject to market
conditions and other factors, including self-imposed black-out periods
during which the Company and its insiders are prohibited from trading
in the Company’s common stock. While blackout periods typically occur
towards the end of a fiscal quarter in anticipation of the public
release of quarterly earnings, the Company may impose a blackout
period at any time without advance public notice. These repurchases
may be commenced or suspended at any time or from time to time without
prior notice.

As of June 30, 2007, the Company had approximately 32 million
shares outstanding and also had cash, cash equivalents and short and
long term investments of approximately $88 million.

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM and 1T-FLASH, and Mixed
Signal technologies.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM, 1T-FLASH
or Mixed Signal technologies, the timing and nature of the license
agreements being signed with our customers and their requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products, ease of manufacturing and yields of
devices incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the expenses and other
consequences of litigation, including intellectual property
infringement litigation, to which we may be or may become a party from
time to time, the vigor and growth of markets served by our licensees
and customers and operations of the Company and other risks identified
in the Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the
future.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY) develops, licenses and
markets industry-leading embedded memory IP for semiconductors. MoSys’
patented 1T-SRAM(R) and 1T-FLASH(TM) technologies offer a combination
of high density, low power consumption, high speed and low cost that
is unmatched by other memory technologies. MoSys licensees have
shipped more than 110 million chips incorporating 1T-SRAM,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available at
http://www.mosys.com. 1T-SRAM is a registered trademark and 1T-FLASH
is a trademark of MoSys, Inc.

CONTACT:
MoSys, Inc.
Jim Pekarsky, +1-408-731-1846
CFO
jimp@mosys.com
or
Shelton Investor Relations
Beverly Twing, +1-972-239-5119, ext. 126
Senior Account Manager
btwing@sheltongroup.com

SOURCE: MoSys, Inc.