SUNNYVALE, Calif.–(BUSINESS WIRE)–Feb. 1, 2006–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, announced today the
licensing of MoSys’ 1T-SRAM(R) high-density embedded memory technology
by YAMAHA Corporation for high-quality audio processing and playback
in advanced mobile phone applications.

“1T-SRAM is a perfect solution for the growing need for
high-density embedded memories in our products,” said Junji Torii,
General Manager of Product Planning Department, Semiconductor Division
at YAMAHA Corporation. “Its optimum combination of density, speed and
power dissipation allows YAMAHA to continue innovating our lineup of
mobile audio LSIs, maintaining our leadership position in terms of
performance, quality and cost.”

“Mobile phones are turning into a powerful multimedia system,
enabling music and video playback as well as radio and television
program reception capabilities,” said Chet Silvestri, Chief Executive
Officer of MoSys, Inc. “YAMAHA Corporation is a major innovator and
retains a leading market share in the mobile audio LSIs market. We are
very pleased that they have selected our 1T-SRAM technology for their
advanced products.”

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at

About YAMAHA Corporation

Information about YAMAHA Corporation is available on YAMAHA’
website at

CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
Shelton PR
Katie Olivier, 972-239-5119 x128

SOURCE: MoSys, Inc.