SUNNYVALE, Calif.–(BUSINESS WIRE)–Sept. 26, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions announced today the
licensing of MoSys’ 1T-SRAM(R) high-density embedded memory technology
by LG Electronics for high-volume consumer electronic applications.

“The benefits of 1T-SRAM based products are obvious,” says Heesub
Lee, vice president of engineering at LG Electronics. “By delivering
an optimum combination of density, speed and power dissipation MoSys’
embedded memories allow LG Electronics to maintain our consumer
products in a leadership position in terms of performance, quality and
cost advantages.”

“LG Electronics is a powerhouse in consumer electronics and
cellular handsets,” said Chet Silvestri, Chief Executive Officer of
MoSys, Inc. “And we are very pleased that they have chosen our 1T-SRAM
technology for their consumer electronic applications.”

ABOUT MOSYS, INC.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
90 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

CONTACT: MoSys, Sunnyvale
Walter Croce, 408-731-1820
wcroce@mosys.com
or
Shelton PR
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com

SOURCE: MoSys, Inc.