SUNNYVALE, Calif.–(BUSINESS WIRE)–April 25, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions announced today the
extension of the existing partnership with Fujitsu Limited to
incorporate MoSys’ 1T-SRAM(R) technology into high volume
semiconductor devices for portable consumer applications manufactured
on Fujitsu’s 90nm process generation.

“We are very impressed with MoSys’ embedded memory IP,” said
Kimiaki Satoh, general manager of the FCRAM Division at Fujitsu
Limited. “We now look to offer the same robust memory capabilities on
Fujitsu’s most advanced 90nm process, following our 130nm process. By
offering both 1T-SRAM embedded macros design and wafer foundry
services, we will provide our customers with first class ASIC
capabilities and the highest quality in the industry.”

“We are pleased to strengthen our relationship with Fujitsu and
are proud to be their high-density embedded memory technology supplier
of choice at 90nm,” said Karen Lamar, vice president of Sales and
Marketing at MoSys, Inc. “By combining our unique memory architecture
and advanced 1T-Q(R) bit cell with Fujitsu’s advanced 90nm logic
process, designers of complex ASIC/SoC devices will have access to
optimal combination of high density, low power dissipating and high
performing solutions for their embedded memory needs.”

“The contribution of MoSys’ 1T-SRAM 130nm at Fujitsu was key for
this new joint program targeting 90nm,” added Gerry Shimauchi, MoSys
International’s Japan Country Manager. “By having 1T-SRAM capabilities
available at their two most advanced process generations, Fujitsu
offers a smooth migration path to their customer’s ever more complex
system requirements. We look forward to a successful and long-term
relationship with Fujitsu.”

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and operations of the Company and other risks identified in the
Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the
future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Walter Croce, 408-731-1820
wcroce@mosys.com
or
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com

SOURCE: MoSys, Inc.