Global partners support proliferation of 1T-SRAM embedded memory technology
SUNNYVALE, CALIFORNIA (July 11, 2002) – MoSys, Inc. (NASDAQ: MOSY) announced today that seven new companies have joined the MoSys 1T-SRAM® Design Services Alliance (DSA) bringing the program to over 20 member companies. The DSA program provides 1T-SRAM licensees with specialized support as the 1T-SRAM technology is increasingly used in SoC designs. The seven new members are: Accent (Italy), Ardentec (Taiwan), Comit Systems (USA), Faraday (Taiwan and US), Global UniChip (Taiwan), RealVision (Japan) and Sidsa (Spain).
The DSA member companies help to reduce design cycle times as well as accelerate the ramp to volume production by providing 1T-SRAM licensees with design expertise and product engineering resources in three critical areas- design services, embedded design for test, and production test and assembly.
“MoSys has been reported by Dataquest to be one of the fastest-growing IP companies world wide*. With the rapid adoption of 1T-SRAM, the DSA program has made available a wealth of design, integration and manufacturing test expertise to our licensees since the program was introduced last July,” commented Bill Lev, manager of MoSys’ DSA program. “We are excited about the benefits our customers will realize by the addition of even more experienced companies from around the globe.” (* See MoSys press release “MOSYS IP REVENUE FASTEST-GROWING WORLDWIDE” dated May 16, 2002, at http://www.mosys.com/news_set.html).
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at www.mosys.com.
Note for Editors:
1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.