Completes Agreement with Atmel Corporation to Acquire Mixed Signal Chip
Designs, IP and Design Team

SUNNYVALE, Calif., July 9 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), the leading provider of high-density system-on-chip (SoC)
embedded memory intellectual property (IP) solutions announces the acquisition
of a number of mixed signal chip designs from Atmel Corporation. As part of
the transaction, MoSys will also hire the Atmel design team that has developed
these products.

The first of these mixed signal technologies to be brought to market is a
single-chip Analog Front End (AFE) for blue laser DVD’s. A unique advantage
of this MoSys solution is that both Blue Ray and HD formats are supported in a
single chip implementation. With this product, MoSys is extending its
solution offering for the consumer home entertainment market. The AFE is a
critical element required to build cost-effective high definition DVD players,
digital video recorders (DVR’s), set-top boxes, or video game console
peripherals.

MoSys becomes the first IP provider to offer a state-of-the-art single-
chip implementation with multi-mode capability for the fast growing high
definition (HD) DVD drive market. According to ABI Research, product sales of
high definition DVD drives are forecasted to grow exponentially from 2.4
million players in 2007 to 55 million players in 2011.

MoSys will license the complete system-on-chip (SoC) design to
manufacturers who want to further integrate the technology into a larger SoC
or simply manufacture and market the design as a stand-alone AFE.

Other products included in the acquisition are targeted as front ends for
high-speed serial interfaces for use in a range of communications markets.
More details on these products will be provided in the future.

“We are very pleased to have completed the purchase of these chip designs
from Atmel Corporation,” said Chet Silvestri, President and CEO of MoSys.
“These fully silicon-proven designs allow us to license additional products to
complement our 1T-SRAM(R) and 1T-FLASH(TM) memory IP that target high-volume
consumer multimedia applications. By expanding our technology portfolio, we
can offer our licensees a more complete set of IP to support their system
solution.”

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys’ patented 1T-
SRAM(R) and 1T-FLASH(TM) technologies offer a combination of high density, low
power consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 110 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at
https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM is a registered trademark and 1T-FLASH is a trademark of MoSys,
Inc.

SOURCE MoSys, Inc.

CONTACT:
Sally Pedreiro of MoSys, Inc.,
+1-408-731-1832,
spedreiro@mosys.com

Web site: https://dev-mosys-web-04-19.pantheonsite.io