SUNNYVALE, Calif., Apr 28, 2003 (BUSINESS WIRE) — MoSys, Inc.
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, today announced an expanded relationship
with Sony Semiconductor Kyushu Corporation, a wholly owned subsidiary
of Sony Corporation, to include the manufacture of products
incorporating MoSys’ 1T-SRAM memory technology in Sony’s own fab in
Kyushu, Japan. Currently, Sony Corporation incorporates MoSys’
1T-SRAM(R) embedded memory technology into its consumer products and
has been in volume production since 2001.

“As customers continue to increase the amount of embedded memory
on a chip, MoSys is committed to making 1T-SRAM memory technologies
available on all processes required by customers for next generation
products,” noted Mark-Eric Jones, vice president and general manager
of Intellectual Property at MoSys. “We are pleased to work with Sony
to extend the availability of our 1T-SRAM technology to products
manufactured at Sony’s Kyushu fab.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.1T-SRAM technologies also offer
the familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making it ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory, demonstrating the excellent
manufacturability of the technology in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or servicenames referenced
in this release may be trademarks or registered trademarks of their
respective holders.

SOURCE: MoSys, Inc.