Apr 09, 2010 (BUSINESS WIRE) –MoSys, Inc.:
MoSys (NASDAQ: MOSY), a leading provider of differentiated, high-
|density memory and high-speed interface (I/O) intellectual property (IP),|
will be exhibiting at TSMC’s 2010 Technology Symposium.
|The TSMC 16th Annual Technology Symposium brings together the best|
|and brightest in the global semiconductor industry to “Collaborate to|
|San Jose, CA – Tuesday, April 13 (8 a.m. – 5 p.m.)|
|San Jose McEnery Convention Center|
|150 West San Carlos Street|
|San Jose, CA 95110|
|Austin, TX – Friday, April 16 (8 a.m. – 5 p.m.)|
|Four Seasons Hotel|
|98 San Jacinto Blvd|
|Austin, TX 78701|
|Boston, MA – Tuesday, April 20 (8 a.m. – 5 p.m.)|
|70 Third Avenue|
|Waltham, MA 02451|
More information is available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io/eventCalendar.php
About MoSys, Inc.
Founded in 1991, MoSys(R) (NASDAQ: MOSY), develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys’ patented 1T-SRAM(R) and 1T-Flash(R) memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications. MoSys’ silicon-proven interface IP portfolio includes DDR3 PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11 Gbps, across a wide range of standards, including PCI Express, XAUI, SATA and 10G KR. MoSys IP has been production-proven in more than 225 million devices.
MoSys is headquartered in Sunnyvale, California. More information is available on MoSys’ website at www.mosys.com.
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.
SOURCE: MoSys, Inc.