MoSys to Present Joint Solutions Including Technology from PLDA, CEVA
and Sarance; Apache Design Solutions; and TSMC

SUNNYVALE, Calif., Jun 14, 2010 (BUSINESS WIRE) –MoSys, Inc. (NASDAQ: MOSY):


Inc. (NASDAQ: MOSY), a leading provider of differentiated,
high-density memory and high-speed interface (I/O) intellectual
property (IP) is participating at the 47th Annual
Design Automation Conference, DAC
. DAC is the world’s leading technical conference and
tradeshow, covering the latest trends in electronic design and
design automation.

What & Where:

Visit MoSys in booth
, TSMC Open Innovation Forum – MoSys.

, MoSys’ Vice President of Business Operations, is
presenting “MoSys and TSMC Collaborating for Innovation” in
TSMC’s Open Innovation Platform Partner Theater on:

Monday, June 14 from 4:30 – 4:45 p.m.
Tuesday, June 15 from 11 – 11:15 a.m.
Wednesday, June 16 from 12:30 – 12:45 p.m.

Ali Burney, Director of Marketing at MoSys, is giving three
presentations at’s IP
stage inside their booth 521:

Monday, June 14 from 2:30 – 3 p.m. on “MoSys-PLDA PCI Express
Gen. 3 Solution.
” Burney will be joined by Stephane Hauradou,
CTO of PLDA, to jointly present this topic.

Tuesday, June 15 from 10:30 – 11:00 a.m. and 12:30 – 1 p.m. on “MoSys-CEVA
SATA 3.0 Solution.

Wednesday, June 16 from 11:30 a.m. – 12 p.m. on “MoSys-Sarance
40G/100G Ethernet Solution.

MoSys’ Richard Rouse, Ph.D., Distinguished Engineer, is
giving a joint presentation with Apache Design Solutions in booth
535 called “ESD
Validation with Silicon Results Using PathFinder
” at 1 p.m. on
Tuesday, June 15.

Join MoSys and on Monday June 14 from 5:00-6:00
p.m. for a complimentary cocktail hour at booth


DAC 2010 takes place June 13-18, 2010 at the Anaheim
Convention Center

About MoSys, Inc.

(NASDAQ: MOSY) develops serial chip-to-chip communications
solutions that deliver unparalleled bandwidth performance for next
generation networking systems and advanced system-on-chip (SoC) designs.
MoSys’ IP portfolio includes DDR3
and SerDes
that support data rates from 1 – 11 Gigabits per second (Gbps)
across a variety of standards. In addition, MoSys offers its flagship,
patented 1T-SRAM(R)
and 1T-Flash(R)
memory cores, which offer a combination of high-density, low power
consumption, high speed and low cost advantages for high-performance
networking, computing, storage and consumer/graphics applications. MoSys
IP is production-proven in more than 225 million devices. MoSys is
headquartered in Sunnyvale, California. More information is available on
MoSys’ website at

MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The
MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned
herein are the intellectual property of their respective owners.

SOURCE: MoSys, Inc.

Media Contact:
Shelton Group
Katie Olivier, 972-239-5119 x128
Corporate Contact:
MoSys, Inc.
Kristine Perham, 408-731-1804