Unmatched 8.5-Gbytes/sec bandwidth using TSMC’s
embedded DRAM process opens new possibilities for designers
SUNNYVALE, Calif., September 28, 1998—
MoSys, Inc. today announced the world’s fastest embedded DRAM. The
announcement also marked an expansion of the MoSys product line
to include embedded memory.
Designed to meet the most aggressive performance requirements of
graphics and communications applications, the new cores are manufactured
using proven and readily available Taiwan Semiconductor Manufacturing
Company’s (TSMC) 0.35µm embedded DRAM process. These new cores are
available exclusively from MoSys.
MoSys’ embedded DRAM cores are configurable from 4 to 32-Mbits
of memory, in one Megabit increments and operate at clock speeds
up to 133MHz. Based on MoSys’ patented Multibank®
technology, the new cores offer three clock random access cycle
time, the fastest of any DRAM to date. The new cores provide an
unprecedented 8.5-Gbytes/sec bandwidth, made possible by the wide
512-bit datapath, with sustained random access bandwidth exceeding
Due to their Multibank architecture, these cores are very power
efficient, ideal for mobile application needs where power and space
conservation are very important.
“During the past three years, MoSys’ Multibank architecture
has led the industry in stand-alone DRAM performance, now this technology
is available to embedded applications,” said Dr. Fu-Chieh Hsu,
chairman and CEO. “We intend to take a leadership role in the
emerging embedded DRAM and SRAM markets and have selected TSMC’s
EDRAM process because of its density, performance and production-proven
“We see a significant growth in embedded memory applications,”
said John Chern, Director of Embedded DRAM programs at TSMC. “Our
partnership with MoSys allows us to offer the highest performance
solutions to our customers.”
The core’s architecture is optimized for ease of application design
and testability, supporting a non-multiplexed address bus, very
simple command set and built-in redundancy and test paths.
Cores based on TSMC’s 0.35µm embedded DRAM process are available
for design now, with higher performance 0.25µm cores under development
scheduled for production in second quarter of 1999.
MoSys, Inc. is the industry pioneer of high performance memory
technologies such as multibanking, multibank caching, double data
rate, fast cycle access, data streaming, terminated reduced-swing
I/O switching, source-synchronous (wave-pipelining) data access,
PLL-assisted clocking, ultra-fast charge sensing and ultra-fast
memory cycle time. Many of these technologies are patented and incorporated
in the Company’s high performance Multibank DRAM, MCache, ultra-fast
SGRAM and ultra-low power 1T-SRAM products and building blocks.
More information about MoSys’ products is available at http://www.mosys.com.
TSMC (ADS traded NYSE: TSM, also traded on TSE) is the world’s
largest dedicated integrated circuit (IC) foundry and offers a comprehensive
set of IC fabrication processes, including processes to manufacture
CMOS logic, mixed-mode, volatile and non-volatile memory and BiCMOS
chips. Currently, TSMC operates two six-inch wafer fabs (Fab 1 and
2) and three eight-inch wafer fabs (Fab 3, 4, and 5), all located
in Hsin-Chu, Taiwan. In mid-1998, TSMC announced that production
wafers were being delivered from its first U.S foundry WaferTech,
a joint venture with Altera, analog Devices and Integrated Silicon
Solution, Inc. The company has broken ground in the new Tainan Park
which will house Fabs 6 and 7. TSMC’s corporate headquarters are
in Taiwan. More information about TSMC is available through the
World Wide Web at http://www.tsmc.com.
MoSys, MDRAM, MCache and Multibank are registered trademarks of
MoSys, Inc., 1T-SRAM is a trademark of MoSys, Inc.