SUNNYVALE, Calif.–(BUSINESS WIRE)–Dec. 31, 2004–Monolithic
System Technology, Inc. (MoSys), (NASDAQ:MOSY) announced that it’s
Chairman, President and CEO Dr. Fu-Chieh Hsu has resigned from the
company effective December 30, 2004. Dr. Hsu, a co-founder of the
company, cited recent health problems as the reason for his
resignation from the company.

Carl Berg, a member of the MoSys Board of Directors and an
original investor in MoSys stated, “We are all very saddened by the
departure of one of the company’s founders and one of Silicon Valley’s
leading technologists. We recognize Fu-Chieh’s significant
contributions and personal sacrifices in building the company.”

Mr. Berg added, “2004 has certainly been a challenging year for
everyone at MoSys. We all wish Fu-Chieh a quick recovery and return to
good health.”

MoSys’ CFO, Mark Voll will assume responsibility for operations at
the company and report directly to the Board during the time the Board
conducts a search for a new CEO.

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT:
MoSys, Sunnyvale

Mark Voll, 408-731-1846

markv@MoSys.com

or

Shelton IR

Beverly Twing, 972-239-5119 Ext. 126

btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc. (MoSys)