Takashi Murayama to Lead Company’s Continued Expansion in Key Market

SUNNYVALE, Calif., April 5, 2007 /PRNewswire-FirstCall via COMTEX News Network/ — MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density system-on-chip
(SoC) embedded memory intellectual property (IP) solutions, today named
Takashi Murayama (56) as vice president and country manager, Japan.
Murayama-san joins MoSys from Transmeta Corp. where he served as vice
president of Transmeta Japan, while simultaneously overseeing the company’s
broader Asia-Pacific operations. Reporting to MoSys’ vice president of
worldwide sales, Raj Singh, Murayama-san will drive the company’s sales and
marketing operations in the region.

Japan is a key market for MoSys, as evidenced by recent design wins and
technology announcements with NEC, Fujitsu, and others. Murayama-san will lead
the company’s sales and marketing initiatives in the region, leveraging his
extensive network to forge new customer partnerships for the company.

“Murayama’s combination of business experience and technology savvy make
him a superb candidate to drive MoSys’ continued expansion in Japan,” said
Singh. “For more than two decades, he has successfully established a strong
presence in Japan for multiple international technology companies such as
Intel, Conexant, and Transmeta. Along the way, he has skillfully managed
complex IP agreements with large Japanese customers, making him a great
addition to MoSys as we further penetrate this key market with our memory IP

About MoSys, Inc.

Founded in 1991, MoSys, develops, licenses and markets industry-leading
embedded memory IP for semiconductors. MoSys’ patented 1T-SRAM(R) and
1T-FLASH(R) technologies offer a combination of high density, low power
consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at

NOTE: 1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.

SOURCE MoSys, Inc.

Jane Ryan, +1-408-489-6391, or jevansryan@sbcglobal.net

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