SUNNYVALE, Calif.–(BUSINESS WIRE)–July 28, 2005–Monolithic
System Technology, Inc. (MoSys), (Nasdaq:MOSY), the leading provider
of high-density system-on-chip (SoC) embedded memory solutions,
announced today the appointment of Chet Silvestri as chief executive

Silvestri brings more than 25 years experience in the
semiconductor industry to MoSys, beginning as a design engineer and
progressing through marketing, sales, R&D and executive management
positions. Most recently, he held the position of CEO at CEVA, a
leading provider of licensable digital signal processor (DSP) cores
and platform-level IP.

Additionally, he served as CEO at Arcot Systems, Inc., COO of
Tripath Technology, Inc. and president of the Microelectronic Division
of SUN Microsystems, Inc., with responsibility for R&D, sales,
manufacturing and marketing of the company’s SPARC microprocessors and
chipsets. He has also held senior management positions with top-tier
technology companies including MIPS Computer Systems, Inc., and Intel

Silvestri earned his bachelor of science and master of science
degrees in electrical engineering from Michigan State University and
his MBA from the Harvard Graduate School of Business.

“I am delighted to join MoSys as CEO. I believe that the company’s
technologies uniquely position MoSys to be the premier provider of
high-density embedded memory,” commented Silvestri. “I look forward to
the challenge and opportunity to leverage my experience in the
semiconductor space and specifically in the IP markets, to further
drive MoSys’ technologies to wider deployment and to create greater
shareholder value.”


Founded in 1991, MoSys develops, licenses and markets innovative
memory technologies for semiconductors. MoSys’ patented 1T-SRAM
technologies offer a combination of high density, low power
consumption, high speed and low cost unmatched by other available
memory technologies. The single transistor bit cell used in 1T-SRAM
memory results in the technology achieving much higher density than
traditional four or six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 90 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 North Mathilda, Sunnyvale,
California 94085. More information is available on MoSys’ website at


This press release may contain forward-looking statements about
MoSys including, without limitation, benefits and performance expected
from use of its 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and other risks identified in the Company’s most recent annual report
on Form 10-K filed with the Securities and Exchange Commission, as
well as other reports that MoSys files from time to time with the
Securities and Exchange Commission. MoSys undertakes no obligation to
update publicly any forward-looking statement for any reason, except
as required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.