SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 31, 2005–MoSys, Inc.,
(NASDAQ: MOSY) the industry’s leading provider of advanced high
density embedded memory solutions, today announced the election of
Chenming Hu to its Board of Directors.

From 2001 to 2004, Dr. Hu was the Chief Technology Officer of
Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC); the world’s
largest dedicated integrated circuits (IC) manufacturing company. He
is currently the TSMC Distinguished Chair Professor in Electrical
Engineering and Computer Sciences at the University of California,
Berkeley. He also was co-founder of Celestry Design Technologies, an
IC design software company that was acquired by Cadence Design Systems
in 2003.

“We are pleased to have Dr. Hu, with his depth of experience and
unique perspective, join our board as we develop new strategies to
further the proliferation of our 1T-SRAM(R) technology, drive revenues
and enhance shareholder value,” said Dr. Wingyu Leung, MoSys executive
vice president, CTO and board member. “Dr. Hu brings a great deal of
experience and expertise in semiconductor technology to our board and
we expect his insights and leadership skills to be of great value to
the company going forward.”

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.MoSys.com.

CONTACT: MoSys, Sunnyvale
Mark Voll, 408-731-1846
markv@MoSys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: MoSys, Inc.