Broad Product Line Offering Targets Mobile, Desktop and Networking
Applications, With Unprecedented
90-Percent Savings In Power Consumption And 50-Percent Savings
Board Space MoSys, Inc., announces ultra-low power SRAM product
family. A new 64Kx64, 512KByte
single-chip, pipeline burst SRAM (PBSRAM), as well as 256Kx32
and 128Kx32 PBSRAMs.
SUNNYVALE, Calif., July 20, 1998— The Ultra-Low Power
SRAM product family is based on MoSys’ patented technology, resulting
in the industry’s smallest memory cell array. The new products incorporate
innovative and proprietary power-saving technologies and feature
power dissipation 80 to 90 percent lower than competitor’s offerings,
at the same voltage and frequency conditions, making them ideal
for Notebook PCs, Sub-notebook PCs, PDAs and other low-power applications.
Having the industry’s smallest memory cell array, 75% smaller
than a standard SRAM cell array, makes the Ultra-Low Power SRAM
product family the most cost effective memory solution for Mobile
PCs, high-performance Desktop PCs as well as networking and communication
The MC80364K64, 64Kx64 PBSRAM is designed to address the stringent
power and space requirements of mobile applications, reducing power
consumption by almost 90 percent compared with standard PBSRAMs
and featuring a built-in sleep mode extending battery life and lowering
operating temperatures. Packaged in a 128-pin LQFP, the MC80364K64
measures only 14x20mm, resulting in a 50-percent reduction in board
space compared to 512Kbyte caches implemented using traditional
The MC803128K32 and MC803256K32, 128Kx32 and 256Kx32 PBSRAMs are
designed to address the cache size requirements of Desktop PCs.
With operating speeds as high as 133MHz now and 166MHz devices available
in Q3 ’98, the devices enable the highest possible performance for
systems with 1 and 2 MByte level two caches.
By employing a larger level two cache, the system performance
is greatly enhanced in today’s multimedia-rich applications with
large data sets, even when compared to processors at higher clock
frequencies, which are significantly more expensive, but with smaller
level two caches.
“MoSys’ SRAM is a breakthrough technology that will enable system
designers to re-evaluate traditional cost-performance tradeoffs
in memory hierarchy and system architecture,” said chairman and
CEO Fu-Chieh Hsu. “MoSys intends to bring the cost, performance
and dramatic power advantages of our patented technology to all
high performance SRAM application segments”.
Both MC80364K64 and MC803128K32 are available now in speeds of
100, 117 and 133MHz, with 3.3V supply and 2.5V-3.3V IO voltage.
“Flow-through” versions, as well as, higher speed grades of
150 and 166MHz will be available in Q3 ’98. Networking oriented
128Kx36 and 256Kx36 devices, with 100% bus utilization during read-write-read
operations, will be introduced in Q4 ’98. Additional, 8 and 16Mbit
density products will follow in 1999.
MoSys, Inc. is the industry pioneer of high performance memory
technologies such as multibanking, multibank caching, double data
rate, fast cycle access, data streaming, terminated reduced-swing
I/O switching, source-synchronous (wave-pipelining) data access,
PLL-assisted clocking, ultra-fast charge sensing and ultra-fast
memory cycle time. Many of these technologies are patented and incorporated
in the company’s high performance Multibank DRAM, MCache, ultra-fast
SGRAM and ultra-low power 1T-SRAM products and building blocks.
Note to Editors:
MoSys, MDRAM, MCache and Multibank are registered trademarks of
MoSys, Inc., 1T-SRAM is a trademark of MoSys, Inc.