SUNNYVALE, Calif., Nov. 8 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), a leading provider of high-density embedded memory and
mixed-signal intellectual property (IP) solutions, today announced that
Mr. Len Perham has joined MoSys as President and Chief Executive Officer,
replacing Chet Silvestri. In addition, the Company announced the resignation
of James Pekarsky, Chief Financial Officer.

Mr. Perham is a successful entrepreneur with over 30 years of executive
leadership and semiconductor industry experience and has been intimately
involved with MoSys since its inception. Mr. Perham was one of the original
investors of MoSys and served on the Company’s Board of Directors for the
first 7 years. Since retiring from Integrated Device Technology in 2000,
Mr. Perham has been active as Chairman of the Board of NetLogic Microsystems,
Chairman of the Board at QuickSil Inc., a Fremont, California based mixed
signal foundry, Chairman of the Board of Optimal Corporation, a semiconductor
design tool provider, and Venture Partner with AsiaTech Management, a venture
capital company.

From 1991 to 2000, Mr. Perham served as CEO of Integrated Device
Technology. He was appointed President and elected to the IDT board of
directors in 1986. During his 16-year tenure, Mr. Perham pursued the
successful incubation of several companies under the IDT umbrella including
Galileo Technology (acquired by Marvell Technology), Quantum Effect Devices
(acquired by PMC-Sierra), MoSys, and Centaur Technology. Prior to joining IDT,
Mr. Perham was President and CEO of Optical Information Systems Inc., a
division of Exxon Enterprises. He was also a member of the founding team at
Zilog Inc. and held management positions at Advanced Micro Devices and Western
Digital. Mr. Perham received a BS in Electrical Engineering from Northeastern
University in Boston, Massachusetts in 1968.

“I am delighted to join MoSys at this pivotal time. With the momentum
behind its 1T-SRAM(R) and 1T-FLASH(TM) embedded memory technology, MoSys is
well positioned for growth,” stated Len Perham, the new CEO of MoSys. “I wish
to thank Chet Silvestri, former President and CEO, and James Pekarsky, former
CFO, for their service to the company and driving it to this stage of
development.”

As an inducement material to Mr. Perham’s employment by MoSys the Company
has granted him options to purchase 800,000 shares of common stock, vesting
ratably over 24 months, subject to continued employment, and options to
purchase up to 450,000 additional shares subject to the attainment of
performance milestones, in accordance with NASDAQ Stock Market Marketplace
Rule 4350(i)(l)(A)(iv). The exercise price of these options is the closing
price of a share of common stock on the NASDAQ Global Market on November 8,
2007.

ABOUT MOSYS, INC.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
innovative memory and analog/mixed-signal technologies for semiconductors.
MoSys’ patented 1T-SRAM and 1T-FLASH technologies offer a combination of high
density, low power consumption, high speed and low cost unmatched by other
available memory technologies. 1T-SRAM technologies also offer the familiar,
refresh-free interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can reduce
operating power consumption by a factor of four compared with traditional SRAM
technology, making them ideal for embedding large memories in System on Chip
(SoC) designs. MoSys’ licensees have shipped more than 135 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating excellent
manufacturability in a wide range of silicon processes and applications.
MoSys’ analog/mixed-signal products feature a number of industry firsts,
including the first DVD front end IP to support both Blu-ray (BD) and HD DVD
formats. Using MoSys IP, system vendors can achieve best-in-class
price/performance in markets such as home entertainment and graphics
applications; mobile consumer devices; and networking and storage equipment.
MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California
94085. More information is available on MoSys’ website at
https://dev-mosys-web-04-19.pantheonsite.io.

MoSys was founded in 1991, and had its initial public offering in 2001
(Nasdaq: MOSY). The company is headquartered in Sunnyvale, California at 755
N. Mathilda Avenue, Sunnyvale, California 94085. More information is available
on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM(R), 1T-FLASH(TM), and GigaCell(TM) are registered trademarks of
MoSys, Inc.

SOURCE MoSys, Inc.

CONTACT:
Sally Pedreiro
of MoSys, Inc.,
+1-408-731-1832,
spedreiro@mosys.com;
or
Kellie Nugent,
Director,
Investor Relations of Shelton
Group,
+1-972-239-5119, ext. 125,
knugent@sheltongroup.com,
for MoSys, Inc.

MoSys, Inc.; NetLogic Microsystems; QuickSil Inc.; Optimal Corporation;
AsiaTech Management