Nikkei Memory Congress

SUNNYVALE, Calif. & TOKYO–(BUSINESS WIRE)–Dec. 16, 2002–MoSys,
Inc. (Nasdaq:MOSY), the industry’s leading provider of high density
SoC embedded memory solutions, today introduced 1T-SRAM-Q(TM) (Quad
density) technology which achieves four times the density of
traditional SRAMs. This addition to the 1T-SRAM(R) technology
addresses the industry’s need for increasing memory density.

The market demands for lower power in consumer products and
greater bandwidth in high performance products are driving the need
for more on-chip memory. By combining MoSys’ proven 1T-SRAM technology
with its new Folded Area Capacitor(TM) (FAC(TM)), the Company has
created the solution with 1T-SRAM-Q technology, doubling the density
of 1T-SRAM memory. 1T-SRAM memory requires a single, non-critical mask
addition to industry standard CMOS logic processes adding no more than
5% to the wafer processing cost.

“By introducing the 1T-SRAM-Q technology, MoSys has solidified its
leadership position as an innovative supplier of memory in the
embedded marketplace,” commented Sherry Garber, Senior Vice President
of Memory Products, Semico Research Corporation. “MoSys has recognized
the need for higher density, lower power, embedded memory, combined
with error correction features that could be fabbed on widely
available logic processes. This is a product positioned for rapid

Building upon the proven 1T-SRAM-R(TM) technology, 1T-SRAM-Q
memory includes MoSys’ Transparent Error Correction(TM) (TEC(TM))
offering the benefits of eliminating laser repair, improving yield,
reliability and soft error rate while doubling the density. The
reduced area of 1T-SRAM-Q memory results in shorter internal signal
paths thereby increasing the speed and lowering power consumption.

“Three years ago, MoSys launched its proprietary 1T-SRAM
technology which doubled the density of embedded memory on standard
logic processes. As anticipated, the market has continued to require
even more on-chip memory and once again, with 1T-SRAM-Q, MoSys is
delivering the technology, to address this need,” stated Dr. Fu-Chieh
Hsu, president and CEO of MoSys. “By leveraging the manufacturability
of standard logic processes in combination with our production proven
1T-SRAM architecture, MoSys continues its commitment to our customers
by delivering innovative embedded memory technologies required by SoC

MoSys’ patented Folded Area Capacitor technology reduces bit cell
size by literally folding the 1T-SRAM gate oxide capacitor vertically
down the STI sidewall so that it occupies less horizontal die area.
The resulting bit cell sizes of 0.50 and 0.28 micron2 enable 1T-SRAM-Q
memory to be used for integrating up to 128-Mbits or 256-Mbits of
embedded memory in 0.13-micron and 90-nanometer processes
respectively. This is achieved by using only one additional
non-critical mask in the standard logic process. Most significantly,
the additional processing does not add to the transistor thermal
cycle, resulting in no change to the logic transistor characteristics.
This avoids the need to re-characterize existing logic IP for
integration in SoCs using 1T-SRAM-Q memory technology.

A Web cast product briefing and supporting materials on 1T-SRAM-Q
are available at in the investor relation’s section.

Price and Availability

License and NRE pricing for designers using 1T-SRAM-Q memory will
remain the same as existing 1T-SRAM technology. MoSys is currently
engaged with initial adopters of 1T-SRAM-Q technology for anticipated
sampling in 2Q 2003 and mass production late 2003. Contact MoSys for
pricing details on specific memory configurations.

1T-SRAM Technical Background

1T-SRAM-Q memory technology is based on MoSys’ patented 1T-SRAM
technology, which offers a combination of high density, low power
consumption, high speed and low cost unmatched by other available
memory technologies. The single transistor bit cell used in 1T-SRAM
technologies results in much higher density memory than possible with
traditional four or six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, hidden refresh interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
this technology can reduce operating power consumption by a factor of
four compared with traditional SRAM technology, contributing to making
it an ideal technology for embedding large memories in SoC designs.
1T-SRAM technologies are in volume production both in SoC products at
MoSys’ licensees, as well as in MoSys’ standalone memories.


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technology for semiconductors. MoSys
licenses its 1T-SRAM memory technologies as intellectual property (IP)
to semiconductor and system companies for the development of SoCs,
which cover a wide range of applications including the communications
and consumer electronics markets. Foundry partners enable MoSys to
provide silicon-proven 1T-SRAM technologies to fabless semiconductor
companies in a variety of processes. MoSys’ Design Services Alliance
(DSA) builds relationships with third-party design firms that enable
MoSys to provide an embedded memory solution while accelerating
1T-SRAM technology’s adoption and licensee’s transition to production.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California
94085. More information is available on MoSys’ Web site at

Note for Editors:

1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent and
Trademark Office. Folded Area Capacitor(TM), FAC(TM), Transparent
Error Correction(TM), TEC(TM), 1T-SRAM-R(TM)and 1T-SRAM-Q(TM)are
trademarks of MoSys. All other trademarks or registered trademarks are
the property of their respective owners.

“Safe Harbor” Statement under the Private Securities Litigation
Reform Act of 1995: Statements in this press release regarding MoSys,
Inc.’s business which are not historical facts are “forward-looking
statements” that involve risks and uncertainties. For a discussion of
such risks and uncertainties, which could cause actual results to
differ from those contained in the forward-looking statements, see
“Risk Factors” in the Company’s Annual Report or Form 10-K for the
most recently ended fiscal year.