SUNNYVALE, Calif.–(BUSINESS WIRE)–Feb. 8, 2005–MoSys, Inc.
(NASDAQ:MOSY) will release its fourth quarter and fiscal year 2004
results for the period ending December 31, 2004 on Wednesday, February
9, after the market closes. Following the release, the Company will
host a live audio Web cast and conference call at 5:15 p.m. Eastern

Mark Voll, Interim CEO and Chief Financial Officer and Karen
Lamar, V.P. of sales and marketing will discuss the company’s earnings
and operations on the call. Investors and other interested parties may
listen to the live Web cast by visiting the investor relations section
of the MoSys website at A Web cast replay will
also be available on the company’s Website.


Founded in 1991, MoSys (NASDAQ:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at


This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technologies.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers, and the impact of our
acquisition of ATMOS Corporation , the termination of our merger
agreement with Synopsys, Inc. and operations of the Company and other
risks identified in the Company’s most recent annual report on Form
10-K filed with the Securities and Exchange Commission, as well as
other reports that MoSys files from time to time with the Securities
and Exchange Commission. MoSys undertakes no obligation to update
publicly any forward-looking statement for any reason, except as
required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: for MoSys, Inc.
Beverly Twing, 972-239-5119 ext. 126

SOURCE: MoSys, Inc.