SUNNYVALE, Calif., Oct. 1 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), a leading provider of high-density system-on-chip (SoC) memory
and analog/mixed-signal IP, today announced the appointment of Mehdi Bathaee
as Chief Operating Officer. This new position was created to more tightly
integrate the various functional areas of the company as it grows from a
supplier of 1T-SRAM(R) intellectual property to also delivering embedded flash
and a range of embedded mixed-signal solutions.

“Because of our recent product line expansion from one technology category
to three distinct technology areas, an organizational change is necessary.
This ensures that we continue to provide the highest quality products and
support to our customers as we broaden our market reach,” said Chet Silvestri,
President and CEO of MoSys. “In the COO role, Mr. Bathaee will be responsible
for all of the internal operations related to the three lines of business —
1T-SRAM, 1T-FLASH, and Mixed Signal Products.”

The high density MoSys 1T-SRAM memory solution has been deployed into many
consumer and communications products. It is currently the embedded memory in
the very successful Nintendo Wii video game console as well as a number of
portable consumer and cellular handset products.

In March of this year, MoSys announced an agreement with Semiconductor
Manufacturing International Corporation (SMIC), China’s leading foundry, to
develop and market the MoSys high density embedded flash. This
1T-Flash(R) technology is now available for licensing.

In July of this year, MoSys acquired the mixed signal products division
from Atmel Corp. and is now actively licensing the complex mixed-signal
megacells that are contained in the Atmel chip designs. Mr. Bathaee was
formerly the General Manager of the Network Storage Products Group of Atmel,
Inc. and joined MoSys as part of the acquisition.

“Today SoCs are composed of customer developed IP, industry standard CPU
cores, and innovative IP developed by third-party providers like MoSys” said
Mr. Bathaee. “MoSys has pioneered the development of 1T-SRAM and 1T-FLASH
embedded memory IP and with the addition of mixed-signal IP is the sole
company that can provide its customers with a full suite of memory and
mixed-signal technologies. With this approach, MoSys is well positioned for
the next stage of growth.”

ABOUT MOSYS, INC.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
innovative memory and analog/mixed-signal technologies for semiconductors.
MoSys’ patented 1T-SRAM(R) technologies offer a combination of high density,
low power consumption, high speed and low cost unmatched by other available
memory technologies. The single transistor bit cell used in 1T-SRAM memory
results in the technology achieving much higher density than traditional four
or six transistor SRAMs while using the same standard logic manufacturing
processes. 1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles associated
with traditional SRAMs. In addition, these technologies can reduce operating
power consumption by a factor of four compared with traditional SRAM
technology, making them ideal for embedding large memories in System on Chip
(SoC) designs. MoSys’ licensees have shipped more than 110 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating excellent
manufacturability in a wide range of silicon processes and applications. MoSys
is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More
information is available on MoSys’ website at http://www.mosys.com.

1T-SRAM(R) and 1T-FLASH(TM) are registered trademarks of MoSys, Inc.

Sally Pedreiro

MoSys, Inc.

Sunnyvale, CA

+1 (408) 731-1832

spedreiro@mosys.com

Beverly Twing, Acct. Manager

Shelton IR

+1 (972) 239-5119 x126

btwing@sheltongroup.com

SOURCE MoSys, Inc.

Web site: http://www.mosys.com