SUNNYVALE, Calif., Aug 29, 2003 (BUSINESS WIRE) — MoSys, Inc.,
(Nasdaq:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, announced that effective today Paul M.
Russo has resigned his seat on the Company’s Board of Directors to
concentrate on his duties as President, Chief Executive Officer and
Chairman of the Board at Silicon Optix Inc. In resigning, Dr. Russo
expressed his belief that he will be unable to devote adequate time to
serving on the MoSys Board.

Commenting on the resignation, Fu-Chieh Hsu, Chairman and CEO of
MoSys stated, “We wish to thank Paul for his contributions as a
talented member of our Board. He will remain a valuable advisor to the
company for the foreseeable future, and I am sure we will continue to
tap into his wealth of knowledge and expertise.” Dr. Hsu continued,
“We have begun the process of identifying a qualified candidate who
will enhance and complement the leadership capabilities of our current
Board.”

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
50 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM technology,
proving our technology in high-volume production of licensees’
integrated circuits, the level of commercial success of licensees’
products such as the Nintendo GAMECUBE and cell phone hand sets, ease
of integration of our 1T-SRAM with other semiconductor functions, ease
of manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers,
the impact of the Company’s recent acquisition of ATMOS Corporation on
future operating results and operations of the Company and other risks
identified in the Company’s most recent annual report on Form 10-K
filed with the Securities and Exchange Commission, as well as other
reports that MoSys files from time to time with the Securities and
Exchange Commission. MoSys undertakes no obligation to update publicly
any forward-looking statement for any reason, except as required by
law, even as new information becomes available or other events occur
in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.