TSMC is first foundry to offer COT customers access
to ultra-dense SRAM technology
MoSys’ patented 1T-SRAM technology offers SRAM performance at DRAM
SUNNYVALE, CA and SAN JOSE, CA, March 1, 1999—
MoSys, Inc. and Taiwan Semiconductor Manufacturing Company Ltd.
(NYSE: TSM) today announced that they have entered into an agreement
to offer TSMC’s customer-owned tooling (COT) customers access to
MoSys’ high performance, high-density embedded 1T-SRAM technology.
Under the terms of this agreement the companies will cooperate to
port, market and distribute the 1T-SRAM technology for customers
of TSMC’s pure logic and embedded DRAM processes.
“This agreement provides TSMC customers with early access
to this ultra-dense SRAM technology,” said Roger Fisher, senior
director of strategic marketing, TSMC, USA. “We believe that
1T-SRAM will be an important technology for our customers’ next-generation
high-integration system-chip products.”
“MoSys has already manufactured high volumes of 1T-SRAM-based
discrete memories at TSMC, the world’s largest dedicated foundry,”
said Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys, Inc. “We are pleased to be extending our
relationship with TSMC to give their COT customers access to our
high-performance, high-density embedded memory technology.”
Available in densities up to 128Mbits, 1T-SRAM technology uses
a single-transistor cell to achieve its exceptional density while
maintaining the refresh-free interface and low latency random memory
access cycle time associated with normal six-transistor SRAM cells.
1T-SRAM memories can be fabricated using either pure logic or embedded
memory processes without violating standard design rules, and using
as little as one ninth of the area of normal six-transistor SRAM
cores. In addition, this technology offers dramatic power consumption
savings using a quarter of the power of conventional SRAM designs.
MoSys 1T-SRAM cores, designed and verified in TSMC’s 0.25-micron
logic process, will be available for license from MoSys during the
second quarter of 1999.
TSMC (ADS traded NYSE: TSM, also traded on TSE) is the world’s
largest dedicated integrated circuit (IC) foundry and offers a comprehensive
set of IC fabrication processes, including processes to manufacture
CMOS logic, mixed-mode, volatile and non-volatile memory and BiCMOS
chips. Currently, TSMC operates two six-inch wafer fabs (Fab 1 and
2) and three eight-inch wafer fabs (Fab 3, 4, and 5) all located
in Hsin-Chu, Taiwan. In mid-1998, TSMC announced that production
wafers were being delivered from its first U.S. foundry, WaferTech,
a joint venture with Altera, Analog Devices and Integrated Silicon
Solutions, Inc. The company has broken ground in the new Tainan
Park, which will house Fabs 6 and 7 and recently announced its participation
in a $1.2 billion joint venture fab with Philips Semiconductor which
is scheduled to open in Singapore in 2000. TSMC’s corporate headquarters
are in Taiwan. More information about TSMC is available through
the World Wide Web at http://www.tsmc.com.
MoSys, Inc. is a semiconductor memory technology company that specializes
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the Company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94086. More information on MoSys is available at http://www.mosys.com.
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Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.