Licensing Agreement Covers TSMC’s 90nm, 65nm, and Future Embedded DRAM Nodes

SUNNYVALE, Calif., Feb 05, 2007 /PRNewswire-FirstCall via COMTEX News Network/ — MoSys, Inc.
(Nasdaq: MOSY), the industry’s leading provider of high-density system-on-chip
(SoC) embedded memory solutions, today announced a licensing agreement that
allows Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) (NYSE: TSM), the
world’s largest dedicated semiconductor foundry, to develop and market memory
macro products using MoSys’ patented 1T-SRAM(R) high-density embedded memory
intellectual property (IP).

The agreement covers current and advanced manufacturing process
generations and further reinforces the companies’ commitment to a long-term
technical and commercial relationship. In addition, MoSys will become one of
TSMC’s embedded DRAM platform providers. At the same time, MoSys will continue
to offer memory macros to its own customers for presently available and future
nanometer geometries.

“The renewal of MoSys’ high-density embedded memory intellectual property
license by TSMC marks an important milestone for MoSys,” commented Chet
Silvestri, chief executive officer of MoSys. “Now SoC designers will continue
to have access to advanced eDRAM technology and design expertise from the
world’s largest semiconductor foundry.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq: MOSY) develops, licenses and markets
innovative memory technologies for semiconductors. MoSys’ patented 1T-SRAM
technologies offer a combination of high density, low power consumption, high
speed, and low cost unmatched by other available memory technologies. The
single transistor bit cell used in 1T-SRAM memory results in the technology
achieving much higher density than traditional four or six transistor SRAMs
while using the same standard logic manufacturing processes. 1T-SRAM
technologies also offer the familiar, refresh-free interface and high
performance for random address access cycles associated with traditional
SRAMs. In addition, these technologies can reduce operating power consumption
by a factor of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in system-on-chip (SoC)
designs. MoSys’ licensees have shipped more than 100 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating excellent
manufacturability in a wide range of silicon processes and applications. MoSys
is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More
information is available on MoSys’ website at http://www.mosys.com .

SOURCE MoSys, Inc.

Raj Singh, Vice President of WW Sales, Marketing & Business Development of MoSys,
+1-408-731-1825, or raj.singh@mosys.com