SUNNYVALE, Calif.–(BUSINESS WIRE)–Dec. 20, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, and Open-Silicon,
Inc., a fabless ASIC company that provides a predictable, reliable and
cost-effective alternative to traditional chip design and supply-chain
models announced today the silicon validation of MoSys’ 1T-SRAM(R)
high-density, high-performance embedded memory technology within
Tharas Systems’ Hammer S-Class and M-Class family of verification
appliances. The custom multi-core device is now in volume production
on TSMC’s 0.13-micron silicon process using 1T-SRAM(R) technology for
its embedded memory.

“To satisfy market needs we required high integration of
simultaneously switching memory,” says Subbu Ganesan, director,
co-founder and CTO of Tharas Systems. “The trade-off analysis and high
integration from Open-Silicon’s IP team combined with the strong
engineering support that MoSys provided allowed us to maximize the
price/performance of our hardware-assisted verification solutions and
delivered first-time working silicon on schedule.”

“Complex designs like Tharas Systems’ multi-core custom processor
are becoming more common, and our customers are requiring higher
densities of embedded memory,” expressed Rajesh Shah, director of
engineering and IP at Open-Silicon. “MoSys 1T-SRAM highly reliable
embedded memory products are a valuable component in Open-Silicon’s
portfolio of silicon proven IP.

“Tharas Systems is a leader in plug-and-play simulation
acceleration solutions and we are thrilled that they have effectively
moved into production with our embedded memory technology,” mentioned
Chet Silvestri, CEO of MoSys. “The success of this joint program with
Open-Silicon demonstrates how teamwork plays an important role our
company’s long term winning relationship.”

About Mosys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

About Open-Silicon, Inc.

Open-Silicon, Inc. is a fabless ASIC company delivering the most
cost-effective, predictable and reliable custom ASIC solution to
electronics product customers worldwide. Open-Silicon’s OpenMODEL is
the semiconductor industry’s first end-to-end custom ASIC solution
based on a revolutionary business model that provides a seamless,
low-cost, low risk alternative to traditional models for complex ASIC
design and development. For more information, visit Open-Silicon’s
website at http://www.open-silicon.com or call 408-523-1200.