E-Disk Leader Leverages 1T-SRAM(R) for Higher Performance and Lower Latency

SUNNYVALE, Calif. and FREMONT, Calif., April 19 /PRNewswire-FirstCall/ —
MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density
system-on-chip (SoC) embedded memory intellectual property (IP) solutions and
BiTMICRO Networks, the leading provider of high-performance non-volatile
solid-state disk and semiconductor solutions, announced today that BiTMICRO
has become the latest licensee of MoSys’ 1T-SRAM(R) embedded memory macro
technology. BiTMICRO will leverage MoSys’ technology to add new performance,
latency and area advantages to its range of E-Disk(R) solid-state storage
solutions.

At a speed of 350 Mhz in a standard 90-nm CMOS logic process, the
MoSys-enabled BiTMICRO memory macro reaches a performance level that is
unmatched by other embedded memory technologies.

“BiTMICRO’s solid-state disk drive and flash disk-drive solutions are
ideal for harsh, demanding, and mission-critical applications in the
industrial, embedded, computer, communication, medical, military, and
aerospace industries,” said Rey Bruce, president and CEO of BiTMICRO Networks.
“MoSys’ 1T-SRAM technology was the only available solution that could meet the
high performance, low latency and demanding reliability requirements of our
system design.”

“MoSys and BiTMICRO are collaborating closely to provide this
performance-optimized design on a standard 90-nm CMOS process,” said Chet
Silvestri, president and CEO of MoSys. “The broad range of applications for
the E-Disk solution further extends the reach of MoSys’ 1T-SRAM technology
into areas with demanding portability, durability, and speed requirements.”

About BiTMICRO Networks

BiTMICRO(R) Networks (http://www.bitmicro.com) is the leading provider of
high performance solid state disk and non-volatile semiconductor storage
solutions. The Company’s flagship product, the E-Disk(R) SSD, is offered with
SATA, SCSI Narrow and Wide, IDE/ATA and Fibre Channel interfaces in 2.5-inch
and 3.5-inch hard disk drive footprints, and 19-inch rack mount configurations
scalable up to several terabytes of pure solid state storage.

E-Disk(R), BiTMICRO(R), EDSA(TM) and LUNETA(TM) are registered trademarks
and trademarks of BiTMICRO Networks, Inc. High-resolution photo images of
BiTMICRO’s product line are available at
http://www.bitmicro.com/press_multimedia.php.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys’ patented
1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density,
low power consumption, high speed and low cost that is unmatched by other
memory technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at
https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.

SOURCE MoSys, Inc.

CONTACT: Sally Pedreiro of MoSys, Inc., +1-408-731-1832,
spedreiro@mosys.com