SUNNYVALE, Calif.–(BUSINESS WIRE)–Nov. 28, 2005–MoSys, Inc.
(NASDAQ: MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions announced today the
silicon validation of MoSys’ 1T-SRAM(R) embedded memory technology
within Pixim’s latest D2500 Video Imaging System chipset. The digital
image sensor and processor devices have been in volume production
since June/2005. The image processor device is manufactured using
MoSys’s 1T-Q(R) advanced bit cell technology for its embedded memory
on TSMC’s 0.13-micron standard CMOS process.

“To deliver the superior wide dynamic range performance and image
quality of our products, Pixim utilizes a number of technology
innovations,” said Ricardo Motta, Chief Technology Officer & Vice
President of Imaging Systems at Pixim, Inc. “MoSys’ 1T-SRAM high
density, high performance embedded memory is a key component to enable
us to achieve these high standards with very low power dissipation.”

“Digital imaging applications are an ideal fit for MoSys’ 1T-SRAM
embedded memory technology, and our multiple successful programs with
Pixim, a leading provider of digital imaging products, are a tangible
proof of that,” mentioned Chet Silvestri, Chief Executive Officer of
MoSys. “With our 1T-SRAM, Pixim was able to achieve considerable die
area savings, affording the company the opportunity to embed larger
amounts of RAM and corresponding features into this highly successful
product and providing a significant competitive advantage.”

ABOUT MOSYS, INC.

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

About Pixim

Pixim Inc. has developed imaging technology and products that
revolutionize the way video cameras capture and process images.
Pixim’s patented Digital Pixel System(R) (DPS) silicon and software
technology produces superior pictures under a wide variety of lighting
conditions. For more information, please visit Pixim at
http://www.pixim.com.

CONTACT: MoSys Inc.
Walter Croce, 408-731-1820
wcroce@mosys.com
or
Pixim Inc.
John Monti, 650-605-1107
monti@pixim.com
or
Shelton PR
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com

SOURCE: MoSys Inc.