SUNNYVALE, Calif.–(BUSINESS WIRE)–June 19, 2006–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, today announced that
Nintendo’s upcoming Wii(TM) video game console uses MoSys’ patented
1T-SRAM technology to implement the very high performance memory
within the Wii console’s graphics system.

This is the latest result from the more than six-years-long
technical collaboration between the two companies. Previous
generations of MoSys’ 1T-SRAM technology were incorporated in
Nintendo’s earlier game console, the Nintendo GameCube(TM), in 1999,
and shipped in multi-million quantities. The newest 1T-SRAM
implementations embedded within the Wii console are fabricated using
NEC Electronics’ advanced 90nm CMOS-compatible embedded DRAM process
technology. These high speed and ultra low latency memories are used
as the main embedded memory on the graphics chip and in an additional
external memory chip.

“We are pleased that Nintendo has again chosen our 1T-SRAM to
power their latest generation game console,” said Chet Silvestri,
chief executive officer at MoSys, Inc.

“Designing the Wii console required an incredible list of
breakthroughs in technology and innovation. The performance delivered
by MoSys’ 1T-SRAM technology is an important element of our solution,”
said Genyo Takeda, Senior Managing Director, General Manager,
Integrated Research & Development Division at Nintendo. “The graphic
performance of Wii benefits from MoSys’ ability to develop highly
innovative and dependable embedded memory products.”

About 1T-SRAM

Available in densities up to 600Mbits, MoSys’ patented 1T-SRAM
technology represents the most advanced embedded memory technology in
the world. It uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional
six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get
beyond the density limits of six-transistor SRAMs; it also reduces
much of the circuit complexity and extra cost associated with using
embedded DRAM. 1T-SRAM memories can be fabricated in either pure logic
or embedded memory processes using as little as one fifth of the area
of traditional six-transistor SRAM cores. In addition to the
exceptional performance and density, this technology offers dramatic
power consumption savings by using only a quarter of the power of
traditional SRAM memories. 1T-SRAM technology is volume production
proven in across multiple silicon processing generations and supported
by a wide number of pure-play wafer foundries and independent Device
Manufactures (IDMs).

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
wcroce@mosys.com

SOURCE: MoSys, Inc.