SUNNYVALE, Calif.–(BUSINESS WIRE)–Feb. 8, 2006–MoSys, Inc.
(NASDAQ: MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, announced today that
its 1T-SRAM(R) CLASSIC Macros family has won the DesignCon
DesignVision Award for best semiconductor and IC intellectual property
technology. The DesignVision Awards program recognizes technologies,
applications, products, and services judged to be the most unique and
beneficial to the industry.

“The DesignVision Awards recognize innovative products and
services that support the work of electronic design engineers, the
core audience at DesignCon,” said Dr. Barry Sullivan, DesignCon 2006
Program Director. “The IEC is pleased to provide this recognition to
companies whose products exemplify our standard of service to the

The MoSys 1T-SRAM CLASSIC memory macros are a family of silicon
proven, pre-configured high-density embedded memory products aimed at
easy integration in System-on-Chip (SoC) designs. These macros allow
the designer to take advantage of the time to market and cost savings
of an off-the-shelf IP product. CLASSIC 1T-SRAM macros are optimized
for leading ASIC and pure-play foundry manufacturing processes and are
available in high-speed or low-power options.

“We are thrilled that our 1T-SRAM CLASSIC Macros family has
received this important recognition,” said Chet Silvestri, CEO of
MoSys, Inc. “We will continue to deliver innovative products to meet
the evolving needs of our customer base. The CLASSIC Macros family,
introduced in June 2005, has been a major success for us and we will
continue to deliver industry-leading IP products that set the
benchmark for excellence.”

Silvestri accepted the award on behalf of MoSys at a ceremony on
Tuesday, February 7, 2006, held at the DesignCon event in Santa Clara,

For additional information about the DesignCon DesignVision Awards
program and a complete list of winners, please visit For
additional information about MoSys’ 1T-SRAM CLASSIC Marcos family,
please visit


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at

CONTACT: MoSys, Inc.
Walter Croce, 408-731-1820
Shelton PR
Katie Olivier, 972-239-5119, Ext. 128

SOURCE: MoSys, Inc.