SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 6, 2003–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
embedded memory technology, announced its 1T-SRAM-R(TM) (reliability)
memory technology is ranked among nine other innovative Digital IC
products in EDN Magazine’s annual “Top Products of 2002”, featured in
the December 12 issue.

“MoSys’ innovative 1T-SRAM-R technology has been well-accepted in
the market, making a significant impact in the industry by providing
improved system-level reliability and soft error rates while also
reducing cost and maintaining the simple, industry-standard SRAM
interface,” said Mark-Eric Jones, vice president and general manager
of intellectual property at MoSys. “The Transparent Error
Correction(TM) (TEC(TM)) technology in 1T-SRAM-R memory has set a new
standard for embedded memory quality, while reducing costs by
enhancing yields and eliminating laser repair. MoSys continues to
provide the industry with innovative memory technologies.”

Among the thousands of new electronic products EDN Magazine
reviews each year, a relative few generate real excitement. The
year-end “Top Products” feature, generated by reader response, covers
14 product categories, including, EDA, multimedia, software, network
processors and computers, boards and buses. In the Digital IC
category, MoSys’ product is placed among those of industry giants
Toshiba, Altera, Xilinx, Lattice Semiconductor and Advanced Micro
Devices.

In December, the company launched another addition to its
1T-SRAM(R) family, 1T-SRAM-Q(TM) (quad density). The 1T-SRAM-Q
technology further increases the density to four times that of
traditional SRAMs, while also incorporating the Transparent Error
Correction (TEC) technology first released in the 1T-SRAM-R product.

ABOUT MOSYS

Founded in 1991, MoSys develops, licenses and markets innovative
memory technology for semiconductors. The single transistor bit cell
used in 1T-SRAM technology results in the technology achieving much
higher density than traditional four or six transistor SRAMs while
using the same standard logic manufacturing processes. 1T-SRAM
technology also offers the familiar, refresh-free interface and high
performance for random address access cycles associated with
traditional SRAMs. In addition, this technology can reduce operating
power consumption by a factor of four compared with traditional SRAM
technology, contributing to making it an ideal technology for
embedding large memories in System on Chip (SoC) designs.

Note for Editors: 1T-SRAM(R)is a MoSys trademark registered in the
U.S. Patent and Trademark Office. All other trademarks or registered
trademarks are the property of their respective owners.