Customers Benefit from Proven IP That Reduces Design Risk and
Enables Greater Complexity in Design

SUNNYVALE & MILPITAS, Calif.–(BUSINESS WIRE)–July 21, 2003– MoSys, Inc. (Nasdaq:MOSY) the industry’s leading provider of
advanced high density embedded memory solutions and Chartered
Semiconductor Manufacturing (Nasdaq:CHRT)(SGX-ST:CHARTERED), one of
the world’s top three dedicated semiconductor foundries, have
announced that MoSys’ 1T-SRAM-R(R) memory technology incorporating
Transparent Error Correction(TM) (TEC(TM)) has been silicon proven in
Chartered’s 0.13-micron baseline logic process.

This milestone rounds out MoSys’ advanced high-density memory
offering for Chartered’s leading-edge semiconductor manufacturing
processes, 0.25-micron through 0.13-micron. The availability of memory
across these multiple technology nodes provides consistency and
reduces risk during design and manufacturing, and also allows
companies to leverage familiar, proven intellectual property (IP)
building blocks as they migrate to smaller geometries for consumer and
communications products.

“Companies are dealing with increasingly complex design challenges
as they face mounting pressure to reduce design costs and hit market
windows, and therefore require design solutions that reduce risk and
instill confidence,” said Kevin Meyer, vice president of worldwide
marketing and services at Chartered. “Our ongoing joint efforts with
MoSys ensure that companies have access to advanced high-density
embedded memory options that are silicon validated for manufacturing
with Chartered. These collaborative efforts also support a full range
of processes, giving our mutual companies a proven, predictable path
for migrating to smaller geometries for customers’ SoC designs.”

“Our 1T-SRAM-R embedded memory technology continues to demonstrate
its scalability and portability, while improving yields, Soft Error
Rate (SER) and reliability through built in Transparent Error
Correction,” commented Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys. “MoSys’ 1T-SRAM-R memory,
which has been silicon-verified with very high yields on Chartered’s
logic process, provides Chartered’s customers with access to
high-density 0.13-micron memory technology and delivers the added
benefit of simplifying production flow by eliminating laser repair.”

About Chartered

Chartered Semiconductor Manufacturing, one of the world’s top
three dedicated semiconductor foundries, is forging a customized
approach to outsourced semiconductor manufacturing by building lasting
and collaborative partnerships with its customers. The Company
provides flexible and cost-effective manufacturing solutions for
customers, enabling the convergence of communications, computing and
consumer markets. In Singapore, Chartered operates five fabrication
facilities and has a sixth fab, which will be developed as a 300mm

A company with both global presence and perspective, Chartered is
traded on both the NASDAQ Stock Market (Nasdaq:CHRT) and on the
Singapore Exchange (SGX-ST:CHARTERED). Chartered’s 3,500 employees
are based at 11 locations around the world. Information about
Chartered can be found at

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 50 million chips incorporating
1T-SRAM embedded memory, demonstrating the excellent manufacturability
of the technology in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ website at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

Chartered Safe Harbor Statement under the provisions of the
United States Private Securities Litigation Reform Act of 1995

This news release may contain forward-looking statements, as
defined in the safe harbor provisions of the U.S. Private Securities
Litigation Reform Act of 1995. These forward-looking statements
reflect our current views with respect to future events, and are
subject to certain risks and uncertainties, which could cause actual
results to differ materially from historical results or those
anticipated. For example: changes in market outlook; the rate of
semiconductor market recovery; economic conditions in the United
States as well as globally; customer demands; the performance level of
our fabrication facilities; the successful implementation of our joint
efforts with MoSys and competition. Although we believe the
expectations reflected in such forward-looking statements are based
upon reasonable assumptions, we can give no assurance that our
expectations will be attained. In addition to the foregoing factors, a
description of certain other risks and uncertainties which could cause
actual results to differ materially can be found in the section
captioned “Risk Factors” in our Annual Report on Form 20-F filed with
the U.S. Securities and Exchange Commission. You are cautioned not to
place undue reliance on these forward-looking statements, which are
based on the current view of management on future events. We undertake
no obligation to publicly update or revise any forward-looking
statements, whether as a result of new information, future events or