SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 13, 2003–MoSys, Inc.
(NASDAQ:MOSY) the industry’s leading provider of high density SoC
embedded memory solutions, and UMC (NYSE:UMC), a world-leading
semiconductor foundry, today announced that MoSys’ 1T-SRAM(R)-R(TM)
technology incorporating Transparent Error Correction(TM) is
silicon-proven in UMC’s 0.13 micron logic process. With this
milestone, MoSys’ customers can now access 1T-SRAM memory technology
that has been verified on three of UMC’s standard logic processes:
0.18, 0.15 and 0.13 micron.
“Given UMC’s position as one of the world’s top foundries, we are
very pleased that our technology is now silicon-proven in their latest
generation standard logic process,” stated Mark-Eric Jones, vice
president and general manager of intellectual property at MoSys. “This
announcement demonstrates the strong relationship between UMC and
MoSys. 1T-SRAM-R technology delivers our mutual customers the highest
density memory solution in a 0.13 micron standard logic process with
the advantages of increased yield and reliability combined with
dramatically reduced soft error rate and elimination of laser repair.”

Dr. C. T. Lee, vice president at UMC said, “MoSys continues to
provide 1T-SRAM macros that meet the memory requirements of a diverse
audience. With this latest accomplishment, designers producing 0.13
micron SoC designs can incorporate 1T-SRAM-R technology, with the
confidence that MoSys’ intellectual property (IP) has been proven in
silicon. Having optimal memory solutions is important as memory will
take up to half of the die area in many upcoming SoC designs.”

The 1T-SRAM-R technology for 0.13 micron silicon is currently
available from MoSys, and is slated to be listed in UMC’s IP Master
online design resource & support center in mid-February, at UMC will also offer customer specific 1T-SRAM
macros, based on customer requirements, directly to customers in Q2

About 1T-SRAM Technology

MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory technology, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications.

About MoSys

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, this technology can reduce operating power consumption by a
factor of four compared with traditional SRAM technology, contributing
to making it an ideal technology for embedding large memories in
System on Chip (SoC) designs. 1T-SRAM technologies are in volume
production both in SoC products at MoSys’ licensees as well as in
MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at

About UMC

UMC (NYSE: UMC, TSE: 2303) is a leading global semiconductor
foundry that manufactures advanced process ICs for applications
spanning every major sector of the semiconductor industry. UMC
delivers cutting-edge foundry technologies that enable sophisticated
system-on-chip (SOC) designs, including 0.13um copper, embedded DRAM,
and mixed signal/RFCMOS. In addition, UMC is a leader in 300mm
manufacturing. Fab 12A in Taiwan is currently in volume production for
a variety of customer products, while the Singapore-based UMCi joint
venture with Infineon Technologies will begin pilot production later
this year. UMC employs over 8,500 people worldwide and has offices in
Taiwan, Japan, Singapore, Europe, and the United States. UMC can be
found on the web at

Note From UMC Concerning Forward-Looking Statements

Some of the statements in the foregoing announcement are forward
looking within the meaning of the U.S. Federal Securities laws,
including statements about future outsourcing, wafer capacity,
technologies, business relationships and market conditions. Investors
are cautioned that actual events and results could differ materially
from these statements as a result of a variety of factors, including
conditions in the overall semiconductor market and economy; acceptance
and demand for products from UMC; and technological and development

1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.