SUNNYVALE, Calif. & HSINCHU, Taiwan–(BUSINESS WIRE)–April 5,
2004–MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider of
high density embedded memory solutions, and UMC (NYSE:UMC), a world
leading semiconductor foundry, today announced the successful silicon
validation of MoSys’ 1T-SRAM-Q(TM) (quad density) embedded memory
technology on UMC’s 0.13-micron logic process. This extends the
existing cooperation between the companies, as an additional optimized
high-density memory solution is available to UMC’s foundry customers.
MoSys’ 1T-SRAM-R was silicon verified on UMC’s 0.13-micron process in
January 2003.

“MoSys’ 1T-SRAM-Q technology expands the portfolio of advanced
solutions that UMC provides to customers,” said Ken Liou, director of
the Design Support division at UMC. “The high-density 1T-SRAM-Q
embedded memory technology offers greater flexibility for our
customers designing complex SoC products with robust memory
requirements.”

1T-SRAM-Q technology enables designers to embed even larger
high-performance memories and incorporates MoSys’ proprietary
Transparent Error Correction(TM) (TEC(TM)) technology, delivering the
additional benefits of improved yield and reliability with elimination
of laser repair and soft error concerns. 1T-SRAM-Q is based on MoSys’
patented Folded Area Capacitor(TM) (FAC(TM)) technology which reduces
bit cell size by folding the bit cell gate oxide capacitor vertically
down the STI sidewall, decreasing the horizontal area. This results in
typical bit cell sizes of 0.5 squared microns for the 0.13-micron
process node.

“We are pleased to expand our relationship with UMC, a top-tier
foundry,” said Mark Eric Jones, vice president and general manager of
Intellectual Property at MoSys. “The silicon validation of 1T-SRAM-Q
on UMC’s 0.13-micron process expands the options for UMC’s foundry
customers requiring integration from one to a large number of
high-performance SRAM megabits in their SoCs.”

The silicon report is available from MoSys.

About UMC

UMC (NYSE:UMC)(TSE:2303) is a leading global semiconductor foundry
that manufactures advanced process ICs for applications spanning every
major sector of the semiconductor industry. UMC delivers cutting-edge
foundry technologies that enable sophisticated system-on-chip (SOC)
designs, including 90nm copper, 0.13um copper, embedded DRAM, and
mixed signal/RFCMOS. UMC is also a leader in 300mm manufacturing; Fab
12A in Taiwan is currently in volume production for a variety of
customer products, while Singapore-based UMCi has just entered volume
production. UMC employs over 8,500 people worldwide and has offices in
Taiwan, Japan, Singapore, Europe, and the United States. UMC can be
found on the web at http://www.umc.com.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making it ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory, demonstrating the excellent
manufacturability of the technology in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif. 94085. More information is available on
MoSys’ website at http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
K.T. Boyle, 408-731-1830
kboyle@mosys.com
or
Shelton PR for MoSys, Dallas
Katie Olivier, 972-239-5119 ext. 128
kolivier@sheltongroup.com
or
KJ Communications for UMC
Eileen Elam, 650-917-1488
eileen@kjcompr.com
or
UMC, Taiwan
Alex Hinnawi, (886) -2-2700-6999 ext. 6958
alex_hinnawi@umc.com

SOURCE: MoSys, Inc.