SUNNYVALE, Calif. & SINGAPORE, Nov 3, 2003 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY) the industry’s leading provider of
high density system-on-chip (SoC) embedded memory solutions, and
Chartered Semiconductor Manufacturing (Nasdaq:CHRT and
SGX-ST:CHARTERED), one of the world’s top three dedicated
semiconductor foundries, today announced an agreement to qualify and
offer MoSys’ innovative quad density 1T-SRAM(R)-Q(TM) technology on
Chartered’s 0.13-micron process. This agreement extends the existing
collaboration between the companies to offer additional optimized
high-density memory solutions on multiple technology generations and

MoSys and Chartered have already successfully qualified MoSys’
1T-SRAM high-density memory solution on Chartered’s 0.18-micron and
0.13-micron process technologies, and are in the process of qualifying
the 1T-SRAM technology on Chartered’s NanoAccess(TM) 90nm SoC
manufacturing technologies. MoSys is a member of Chartered’s
NanoAccess Alliance aimed at accelerating development and reducing the
risk of nanometer-scale integrated circuits (ICs) and SoC devices for
fabless and fab-lite chip companies.

“We are pleased to extend our partnership with Chartered for the
support of our advanced 1T-SRAM-Q technology,” noted Mark-Eric Jones,
vice president and general manager of Intellectual Property at MoSys.
“This addition broadens the range of options for Chartered’s foundry
customers requiring integration from one to hundreds of megabits of
high-performance SRAM in their SoCs.” “The memory requirements of
customers are increasing over time and with each technology node. By
offering MoSys’ high-density embedded memory technologies as a
complement to Chartered’s proven 0.13-micron platform, customers have
greater flexibility and a predictable path for implementing their
SoCs,” said Kevin Meyer, vice president of worldwide marketing and
services at Chartered. “Our ongoing efforts with MoSys to qualify its
1T-SRAM-Q technology is a reflection of our desire to provide access
to advanced solutions for our mutual customer base.”

About 1T-SRAM-Q

1T-SRAM-Q technology is the latest offering from MoSys as part of
its embedded memory solutions. 1T-SRAM-Q achieves its exceptional
density by using bit cells of just 0.50 micron2 in the 0.13-micron
logic process. Using only one additional, non-critical mask on the
standard logic process, 1T-SRAM-Q enables cost-effective integration
of large amounts of embedded memory on SoC designs without any change
to the other logic IP blocks or libraries. 1T-SRAM-Q incorporates
MoSys’ proprietary Transparent Error Correction(TM)(TEC(TM))
technology delivering the additional benefits of improved yield and
reliability with elimination of laser repair and soft error concerns.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ website at

About Chartered

Chartered Semiconductor Manufacturing, one of the world’s top
three dedicated semiconductor foundries, is forging a customized
approach to outsourced semiconductor manufacturing by building lasting
and collaborative partnerships with its customers. The Company
provides flexible and cost-effective manufacturing solutions for
customers, enabling the convergence of communications, computing and
consumer markets. In Singapore, Chartered operates five fabrication
facilities and has a sixth fab, which will be developed as a 300mm

A company with both global presence and perspective, Chartered is
traded on both the NASDAQ Stock Market (Nasdaq:CHRT) and on the
Singapore Exchange (SGX-ST:CHARTERED). Chartered’s 3,500 employees are
based at 11 locations around the world. Information about Chartered
can be found at

Note for Editors: 1T-SRAM(R) is a MoSys trademark registered
in the U.S. Patent and Trademark Office. NanoAccess is a trademark of
Chartered Semiconductor Manufacturing. All other trade, product, or
service names referenced in this release may be trademarks or
registered trademarks of their respective holders.

Chartered Safe Harbor Statement under the provisions of the United
States Private Securities Litigation Reform Act of 1995

This news release may contain forward-looking statements, as
defined in the safe harbor provisions of the U.S. Private Securities
Litigation Reform Act of 1995. These forward-looking statements are
subject to certain risks and uncertainties, which could cause actual
results to differ materially. Among the factors that could cause
actual results to differ materially are: the difficulties,
interruptions or unforeseen delays in the implementation of our
collaborative efforts with MoSys; changes in market outlook and
trends; customer demands; rate of semiconductor market recovery;
economic conditions in the United States as well as globally; the
performance level of and technology mix in our fabrication facilities
and competition. Although Chartered believes the expectations
reflected in such forward-looking statements are based upon reasonable
assumptions, we can give no assurance that our expectations will be
attained. In addition to the foregoing factors, a description of
certain other risks and uncertainties which could cause actual results
to differ materially can be found in the section captioned “Risk
Factors” in our Annual Report on Form 20-F and our First Quarter 2003
Quarterly Report on Form 6-K filed with the U.S. Securities and
Exchange Commission. You are cautioned not to place undue reliance on
these forward-looking statements, which are based on the current view
of management on future events. Chartered undertakes no obligation to
publicly update or revise any forward-looking statements, whether as a
result of new information, future events or otherwise.

SOURCE: MoSys, Inc.