Setting new standard for memory performance in video game consoles
SUNNYVALE, CA (May 16, 2001) – MoSys, Inc. announced today that Nintendo is using 27 megabytes of MoSys’ high-performance, low-latency 1T-SRAM memory technology in the production of the “GAMECUBE”, Nintendo’s new generation video game console.
Setting a new standard by incorporating more SRAM-performance memory than any previous consumer product, the Nintendo GAMECUBE realizes the highest level of graphics performance while also enhancing the productivity of games developers.
“The exceptional low latency and high speed, combined with the production benefits of easy manufacturability of 1T-SRAM memory is enabling product designers to set new standards for cost and performance” commented Dr. Fu-Chieh Hsu,
MoSys’ CEO and president “We are proud of MoSys’ contribution to this outstanding product from Nintendo.”
By using MoSys’ 1T-SRAM technology in the graphics processor’s embedded memories, as well as the main system memories, the GAMECUBE avoids the hardware complexities required by the variable-latency and low-performance of other memory technologies.
The dependable high-performance and low-latency characteristic of the 1T-SRAM memory technology also simplifies the task of writing and de-bugging games for GAMECUBE. With a sustained latency of under 10ns and 400MHz operation, the 24 megabytes of 1T-SRAM main memory in GAMECUBE delivers performance previously only available in cache memories, while the 3 megabytes of 1T-SRAM memories embedded in the “Flipper” graphics processor chip have under 5ns latency and deliver a sustained bandwidth of over 20 gigabytes per second.
“GAMECUBE has achieved the highest level system-on-chip (SOC) integration for game consoles. We are very pleased with this successful collaboration, combining NEC LSI and process strength with MoSys 1T-SRAM technology in the Flipper system LSI device producing an extremely high performance and highly manufacturable product,” commented Hiro Hashimoto, CEO and president of NEC Electronics whose state-of-the-art fabrication facility in Kyushu,
Japan is manufacturing the graphics processor and main memory chips that use MoSys’ 1T-SRAM technology.
In a recent market research report, Semico Research Corporation estimates the video games console market will grow at over 20% CAGR over the period 2000 to 2005 with over 47 million video games console units to be shipped next year.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology achieves much higher density than traditional four or six transistor SRAMs while using standard logic manufacturing processes.
No changes are required to standard logic processes when implementing the 1T-SRAM embedded memory. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in high volume production in SoC products from MoSys’ licensees. The high density of 1T-SRAM memory results in dramatic silicon area savings and manufacturing yields that are much higher than traditional six transistor memories. The high yield is further enhanced by built-in redundancy.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.
Note for Editors:
1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.