Ultra-dense memory technology available to UMC’s foundry customers

SUNNYVALE, CA (April 25, 2000)— Today MoSys, Inc. and
UMC announced a long-term agreement to provide UMC’s foundry customers
access to MoSys’ ultra-dense 1T-SRAM embedded memories. Both companies
have cooperated on the development, porting and silicon-verification
of MoSys’ 1T-SRAM technology which is available on UMC’s deep submicron
logic processes.

“UMC continues to set the technology pace; planning to ship
one-quarter million 0.18-micron wafers this year and production
qualifying 0.15-micron technology this month. We are also expanding
0.18/0.15-micron capacity, aggressively ramping the newest fleet
of fabs in the industry,” said Dr. Jim Ballingall, vice president
of worldwide marketing at UMC. “MoSys’ 1T-SRAM technology provides
our system-on-chip customers with the capability to economically
integrate megabytes of high-performance memory on these industry-leading
processes, addressing a density segment between the typical densities
of our 6T-SRAM and embedded DRAM technologies.”

Today’s announcement extends the ongoing cooperation between the
companies under UMC’s Silicon ShuttleÔ
and Gold-IPÔ programs in order to
accelerate the availability of embedded 1T-SRAM memories. Now UMC’s
customers can rapidly obtain 1T-SRAM macros customized to their
requirements and optimized for UMC’s logic processes. With the 1T-SRAM
technology, targeted to UMC’s processes, UMC’s customers have a
fast, time-to-market approach for embedding high-density memories
into their SoCs, complementing the array of silicon-proven analog
and digital cores available in the UMC Gold IPÔ
catalog.

“MoSys’ 1T-SRAM embedded memory is building tremendous success
among the fabless semiconductor companies,” noted Mark-Eric
Jones, vice president and general manager of intellectual property
at MoSys, Inc. “We are excited to extend our solutions, through
this partnership, to UMC’s customers as we offer MoSys’ unique memory
architecture on UMC’s latest processes.”

ABOUT 1T-SRAM

Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. In addition to the exceptional performance and density, this
technology offers dramatic power consumption savings by using under
a quarter of the power of traditional SRAM memories. 1T-SRAM technology
is volume production proven in millions of MoSys’ discrete memory
devices.

NOTE CONCERNING FORWARD-LOOKING STATEMENTS

Some of the statements in the foregoing announcement are forward
looking within the meaning of the U.S. Federal Securities laws,
including statements about future outsourcing, wafer capacity, technologies,
business relationships and market conditions. Investors are cautioned
that actual events and results could differ materially from these
statements as a result of a variety of factors, including conditions
in the overall semiconductor market and economy; acceptance and
demand for products; and technological and development risks.

ABOUT UMC

UMC, a world leading semiconductor foundry, operates fabs in Taiwan
and Japan and has two 12-inch fabs under construction. UMC is a
leader in foundry technology and expects capacity to reach 2.4 million
wafers per year in 2000 with over half in advanced 0.18 and 0.25-micron
technology. UMC will introduce WorldlogicÔ
standard 0.13-micron in year 2000. Global sales were $1.75 billion
in 1999. UMC has marketing and customer support offices located
in the United States, Japan, and the Netherlands. UMC can be found
on the web at: http://www.umc.com.

ABOUT MOSYS

MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company’s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at http://www.mosys.com.

 

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Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other
trademarks or registered trademarks are the property of their respective
owners.
Worldlogic, ASICplus and Gold IP are trademarks of UMC.