SUNNYVALE, Calif. & SHANGHAI, China–(BUSINESS WIRE)–May 19,
2003–MoSys, Inc. (Nasdaq:MOSY) the industry’s leading provider of
high density SoC embedded memory solutions and Semiconductor
Manufacturing International Corporation (SMIC), China’s first advanced
open-IC foundry, have announced the silicon verification of MoSys’
1T-SRAM(R) memory technology on SMIC’s 0.18-micron standard logic
process.

With this manufacturing milestone completed, SMIC’s customers can
confidently select MoSys’ 1T-SRAM technology to meet the memory
requirements of their System-on-Chip (SoC) designs.

“SMIC’s silicon verification of MoSys’ 1T-SRAM memory gives our
customers access to an embedded memory technology that passes the test
of successful manufacturing. This reduces design risk and enhances the
ability to create complex SoC designs,” stated James Sung, vice
president of Sales and Marketing at SMIC. “Our cooperation with MoSys
provides our customers with a seamless path from design to
manufacturing, and enables creation of system-level devices using
MoSys’ unique, high density memory architecture.”

“MoSys’ 1T-SRAM embedded memory technology lets SMIC’s customers
achieve system-level integration with increased memory density and
logic on the same chip,” commented Mark-Eric Jones, vice president and
general manager of Intellectual Property at MoSys, Inc. “We look
forward to working with SMIC, its customers and partners.”

About SMIC

SMIC is the first pure-play advanced IC foundry in China to
achieve volume production of 8-inch wafers at 0.25-micron, 0.18-micron
and finer-line technologies. Established in April 2000, SMIC is a
Cayman Islands company based in Shanghai. The foundry provides
customers with a full range of services that include: design services,
mask manufacturing, wafer fabrication as well as testing capabilities.
For more information please visit www.smics.com.

About Mosys and 1T-SRAM

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 50 million chips incorporating
1T-SRAM embedded memory, demonstrating the excellent manufacturability
of the technology in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ Web site at
http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.