2004–MoSys, Inc. (Nasdaq:MOSY) the industry’s leading provider of
high density SoC embedded memory solutions and DongbuAnam
semiconductor (DongbuAnam), have announced the silicon verification of
MoSys’ 1T-SRAM(R) memory technology on DongbuAnam’s 0.18-micron
standard logic process, and initiated 0.13-micron verification as
well. With these manufacturing milestones completed, DongbuAnam’s
customers can confidently select MoSys’ 1T-SRAM technology to meet the
memory requirements of their System-on-Chip (SoC) designs.

“DongbuAnam’s silicon verification of MoSys’ 1T-SRAM memory gives
our customers access to an embedded memory technology that passes the
test of successful manufacturing. This reduces design risk and
enhances the ability to create complex SoC designs,” stated Jae Song,
vice president of Marketing at DongbuAnam. “Our cooperation with MoSys
provides our customers with a seamless path from design to
manufacturing, and enables creation of system-level devices using
MoSys’ unique, high density memory architecture.”

“MoSys’ 1T-SRAM embedded memory technology lets DongbuAnam’s
customers achieve system-level integration with increased memory
density and logic on the same chip,” commented Dr. Fu-Chieh Hsu,
President and CEO of MoSys Inc. “We look forward to working with
DongbuAnam, its customers and partners.”

About DongbuAnam Semiconductor

DongbuAnam Semiconductor, the world’s fourth largest pure-play
wafer foundry, specializes in world-class CMOS wafer processing that
enables system-on-a-chip implementations that integrate the most
advanced logic, analog, and mixed-signal technologies. Through close
working relationships with strategic partners, DongbuAnam offers a
broad range of services that augment its world-class wafer
manufacturing capabilities. These include initial design, intellectual
property access and prototyping as well as backend assembly, packaging
and testing. DongbuAnam is a key global supplier within Korea’s
well-established semiconductor manufacturing infrastructure. For more
information, visit

About MoSys and 1T-SRAM

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 50 million chips incorporating
1T-SRAM embedded memory, demonstrating the excellent manufacturability
of the technology in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ Web site at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Jack Koplik, 408-731-1838
DongbuAnam Semiconductor, Seoul
Jae Song, +82 (11) 9736-3482
Crossborder PR, San Jose
Elizabeth Estrella-Basilio, 408-348-7538

SOURCE: MoSys, Inc.