Ultra-dense memory technology designed into Ethernet Switch-on-a-Chip
SUNNYVALE, CALIFORNIA (April 16, 2001) – MoSys, Inc. announced today that Broadcom’s successful ROBOswitch-plus family of Ethernet switch-on-a-chip ICs incorporates MoSys’ advanced ultra-dense memory.
Broadcom’s third-generation remote office business office (ROBO) switches – the BCM5315, BCM5317, and BCM5318 – provide affordable, high-speed, local connectivity to small office environments.
“In order to improve the performance of Broadcom’s Ethernet switch ICs, we worked very closely with MoSys to integrate these advanced memories into our designs,” commented Martyn Humphries, product line manager for Broadcom’s Small-Medium Business (SMB)
unit. “To date, Broadcom has shipped in excess of four million Ethernet ports built using ICs that embed MoSys’ 1T-SRAM technology.”
Broadcom uses MoSys’ 1T-SRAM memory on standard CMOS logic processes, which provides it maximum flexibility in embedding all the necessary memory alongside the logic and mixed signal circuitry on these ASSPs.
Broadcom’s ROBOswitch-plus family provides 10/100 Ethernet connectivity with integrated PHY and packet buffer memory on a single chip.
“Broadcom’s aggressive moves to bring high levels of integration into its ICs have brought high performance switches at affordable prices to the ROBO / SOHO markets,” noted Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys, Inc.
“MoSys is pleased that its 1T-SRAM memory technology helps Broadcom achieve these high levels of integration.”
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs whilst the innovative 1T-SRAM architecture allows the use of standard logic manufacturing processes without requiring any process changes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs.
In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs.
1T-SRAM technology is in volume production both in discrete memories available from MoSys as well as in SoC products at MoSys’ licensees.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys.
Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.
Note for Editors:
1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.