1T-SRAM Technology Licensed for Virata’s Product Roadmap

SUNNYVALE, CALIFORNIA (October 8, 2001) – Today, MoSys, Inc. (NASDAQ: MOSY) announced that Virata has licensed MoSys’ 1T-SRAM embedded memory technology, which will be incorporated in Virata’s future products.
Virata’s family of communication ICs integrates its communications software and processors with the goal to simplify its customers’ product development.

“Virata’s Integrated Software on Silicon platform offers broadband communication software and complex SOCs with large on-chip memory for embedded
firmware,” said Trevor Coleman, vice president of product marketing for Virata. “Virata has evaluated MoSys’ 1T-SRAM embedded memory technology and selected MoSys for its unique performance, density and power capabilities not available from other technologies.”

To date, MoSys 1T-SRAM technology has been silicon-proven in five process generations and is in volume production in three process technologies.
Communications and consumer product developers have benefited from MoSys’ ultra dense high performance 1T-SRAM memory. As Virata deepens the level
of integration on its chips, this new agreement allows it to embed the increasing amounts of memory needed to meet customer demand for cost-effective, high-performance communications devices.

“We are very pleased that Virata has chosen MoSys’ 1T-SRAM technology as it continues its steady rollout of products for the broadband access market,” noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys.
“1T-SRAM memory is becoming established as the most cost-effective solution for SOC embedded memory.”


Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies.
The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four
compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys
stalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.


Note for Editors:

1T-SRAM is a registered trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.

Virata® is a registered trademark, and ISOS, Integrated Software on Silicon are trademarks of Virata. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.