SUNNYVALE, Calif. & SAPPORO, Japan–(BUSINESS WIRE)–March 14,
2005–MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider of
high density SoC embedded memory solutions today announced that HUDSON
Soft Co., Ltd. (OSAKA:4822) a leading manufacturer of game software
and entertainment equipment, successfully verified MoSys’ 1T-SRAM(R)
embedded memory technology using UMC’s 150nm process technology. The
Hudson Soft Video Game Controller is now in volume production using
1T-SRAM(R) technology for its embedded memory.

“1T-SRAM(R) technology made it possible to develop our 32-bit,
single chip LSI with network function achieving the required high
performance, top quality and cost effectiveness. It had started
production and is adopted into electronic toys that have been launched
in Japan in November 2004,” said Satoru Murakami, Corporate Executive
Officer, Head of the Core Technology Division, Hudson Soft.

“We are pleased that Hudson Soft has successfully started volume
production,” expressed Karen Lamar, MoSys’ Vice President of Sales and
Marketing. “This comes as a result of the close relationship between
Hudson Soft and MoSys teams.”

Ken Liou, Director – IP Development and Design Support division at
UMC, said, “UMC’s SoC solution foundry approach involves working
closely with our customers and supply chain partners to achieve
production success in the shortest time possible. This effort has paid
off again with the successful volume production of Hudson Soft’s Video
Game Controller incorporating Mosys’s 1T-SRAM(R) technology. We look
forward to working with both companies for their future product
lines.”

“The success of this device opens the electronic toy markets for
MoSys’ 1T-SRAM(R) technology,” added Gerry Shimauchi, MoSys
International’s Japan General Manager. “It proves the advantages
brought by 1T-SRAM(R) based products are not limited to communication
and consumer applications. Our close relationship with Hudson Soft
will allow the development of innovative products for many other
application fields.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM(R) technologies offer a combination of high density,
low power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM(R) memory results in the technology achieving much higher
density than traditional four or six transistor SRAMs, while using the
same standard logic manufacturing processes. 1T-SRAM(R) technologies
also offer the familiar, refresh-free interface and high performance
for random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 80
million chips incorporating 1T-SRAM(R) embedded memories,
demonstrating the excellent manufacturability of the technology in a
wide range of silicon processes and applications. MoSys is
headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More
information is available on MoSys’ website at http://www.mosys.com.

ABOUT HUDSON

HUDSON SOFT CO., LTD. (Headquarters: Sapporo, Hokkaido, Japan)
(OSAKA:4822) is the one of major Japanese game developers since 1973.
HUDSON has developed premier consumer game titles for Nintendo, and
Sony Computer Entertainment.

Company has recently reorganized its business segments and focused
resources on Consumer Content Business for home-use game consoles,
Network Content Business providing mobile phone content services and
online-games. For more information, visit our website at
www.hudson.co.jp.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: Shelton PR
Media Contact
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com
or
Shelton IR
Investor Contact
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com
or
MoSys
Walter Croce, 408-731-1820
wcroce@mosys.com

SOURCE: MoSys, Inc.